Effect of different type intermediate layers on band structure and gain of Ga1-xInxNyAs1-y-GaAs quantum well lasers

被引：1
|
作者：
Zhang, W [1 ]
Xu, YQ [1 ]
Wu, RH [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2003年 / 15卷 / 10期
关键词：
band structure; differential gain; GaInNAs; optical gain; strain compensated; strain mediated;
D O I：
10.1109/LPT.2003.818264
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Based on the band-anticrossing model, the effect of the strain-compensated layer and the strain-mediated layer on the band structure, the gain, and the differential gain of GaInNAs-GaAs quantum well lasers have been investigated. Different band-filling mechanisms have been illustrated. Compared to the GaInNAs-GaAs single quantum well with the same wavelength,, the introduction. (if the strain-compensated layer and the strain-mediated layer increases the transparency carrier density. However, these multilayer structures help to suppress the degradation of the differential gain.
引用
收藏
页码：1336 / 1338
页数：3
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