Growth of Multilayer Graphene with a Built-in Vertical Electric Field

被引:15
|
作者
Yoo, Min Seok [1 ]
Lee, Hyo Chan [1 ]
Wolf, Christoph [2 ]
Nguyen Ngan Nguyen [1 ]
Park, Do-Hyun [3 ]
Kim, Jinsung [1 ]
Lee, Eunho [1 ]
Chung, Hyun-Jong [3 ]
Cho, Kilwon [1 ]
机构
[1] Pohang Univ Sci & Technol, Dept Chem Engn, Pohang 37673, South Korea
[2] Inst Basic Sci IBS, Ctr Quantum Nanosci, Seoul 03760, South Korea
[3] Konkuk Univ, Dept Phys, Seoul 05029, South Korea
关键词
BILAYER GRAPHENE; BANDGAP; DEFECTS;
D O I
10.1021/acs.chemmater.0c01145
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Multilayer graphene is considered a promising material for various optoelectronic devices. To exploit its intriguing electronic properties, an electric field must be achieved inside this material. However, creation of a desired electric field in multilayer graphene is difficult because any external electric field is mostly screened by its outermost surface. Here, we report a one-step chemical vapor deposition method for the synthesis of Bernal-like stacked graphene with a built-in vertical electric field that can be tuned over a wide range. This method can be used to control the optoelectronic properties of graphene in the synthesis stage. Owing to this built-in vertical electric field and Bernal-like stacking, the synthesized graphene exhibits vertical photovoltaic effects, which is very promising for various optoelectronic applications.
引用
收藏
页码:5142 / 5152
页数:11
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