Multilayer graphene is considered a promising material for various optoelectronic devices. To exploit its intriguing electronic properties, an electric field must be achieved inside this material. However, creation of a desired electric field in multilayer graphene is difficult because any external electric field is mostly screened by its outermost surface. Here, we report a one-step chemical vapor deposition method for the synthesis of Bernal-like stacked graphene with a built-in vertical electric field that can be tuned over a wide range. This method can be used to control the optoelectronic properties of graphene in the synthesis stage. Owing to this built-in vertical electric field and Bernal-like stacking, the synthesized graphene exhibits vertical photovoltaic effects, which is very promising for various optoelectronic applications.
机构:
Cent South Univ, State Key Lab Powder Met, Changsha 410083, Peoples R ChinaCent South Univ, State Key Lab Powder Met, Changsha 410083, Peoples R China
Zhao, Xin
Liu, Mengjie
论文数: 0引用数: 0
h-index: 0
机构:
Cent South Univ, State Key Lab Powder Met, Changsha 410083, Peoples R ChinaCent South Univ, State Key Lab Powder Met, Changsha 410083, Peoples R China
Liu, Mengjie
Wang, Yuchao
论文数: 0引用数: 0
h-index: 0
机构:
Cent South Univ, State Key Lab Powder Met, Changsha 410083, Peoples R ChinaCent South Univ, State Key Lab Powder Met, Changsha 410083, Peoples R China
Wang, Yuchao
Xiong, Yu
论文数: 0引用数: 0
h-index: 0
机构:
Cent South Univ, State Key Lab Powder Met, Changsha 410083, Peoples R ChinaCent South Univ, State Key Lab Powder Met, Changsha 410083, Peoples R China
Xiong, Yu
Yang, Peiyao
论文数: 0引用数: 0
h-index: 0
机构:
Cent South Univ, State Key Lab Powder Met, Changsha 410083, Peoples R ChinaCent South Univ, State Key Lab Powder Met, Changsha 410083, Peoples R China
Yang, Peiyao
Qin, Jiaqian
论文数: 0引用数: 0
h-index: 0
机构:
Chulalongkorn Univ, Met & Mat Sci Res Inst, Res Unit Adv Mat Energy Storage, Bangkok 10330, ThailandCent South Univ, State Key Lab Powder Met, Changsha 410083, Peoples R China
Qin, Jiaqian
Xiong, Xiang
论文数: 0引用数: 0
h-index: 0
机构:
Cent South Univ, State Key Lab Powder Met, Changsha 410083, Peoples R ChinaCent South Univ, State Key Lab Powder Met, Changsha 410083, Peoples R China
Xiong, Xiang
Lei, Yongpeng
论文数: 0引用数: 0
h-index: 0
机构:
Cent South Univ, State Key Lab Powder Met, Changsha 410083, Peoples R ChinaCent South Univ, State Key Lab Powder Met, Changsha 410083, Peoples R China
机构:
Purdue Univ, Sch Mat Engn, W Lafayette, IN 47907 USA
Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USAPurdue Univ, Sch Mat Engn, W Lafayette, IN 47907 USA
Liang, Zhiwen
Wildeson, Isaac H.
论文数: 0引用数: 0
h-index: 0
机构:
Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USAPurdue Univ, Sch Mat Engn, W Lafayette, IN 47907 USA
Wildeson, Isaac H.
Colby, Robert
论文数: 0引用数: 0
h-index: 0
机构:
Purdue Univ, Sch Mat Engn, W Lafayette, IN 47907 USA
Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USAPurdue Univ, Sch Mat Engn, W Lafayette, IN 47907 USA
Colby, Robert
Ewoldt, David A.
论文数: 0引用数: 0
h-index: 0
机构:
Purdue Univ, Sch Mat Engn, W Lafayette, IN 47907 USA
Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USAPurdue Univ, Sch Mat Engn, W Lafayette, IN 47907 USA
Ewoldt, David A.
Zhang, Tong
论文数: 0引用数: 0
h-index: 0
机构:
Purdue Univ, Coll Technol, W Lafayette, IN 47907 USAPurdue Univ, Sch Mat Engn, W Lafayette, IN 47907 USA
Zhang, Tong
Sands, Timothy D.
论文数: 0引用数: 0
h-index: 0
机构:
Purdue Univ, Sch Mat Engn, W Lafayette, IN 47907 USA
Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USAPurdue Univ, Sch Mat Engn, W Lafayette, IN 47907 USA
Sands, Timothy D.
Stach, Eric A.
论文数: 0引用数: 0
h-index: 0
机构:
Purdue Univ, Sch Mat Engn, W Lafayette, IN 47907 USA
Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USAPurdue Univ, Sch Mat Engn, W Lafayette, IN 47907 USA
Stach, Eric A.
Benes, Bedrich
论文数: 0引用数: 0
h-index: 0
机构:
Purdue Univ, Coll Technol, W Lafayette, IN 47907 USAPurdue Univ, Sch Mat Engn, W Lafayette, IN 47907 USA
Benes, Bedrich
Garcia, R. Edwin
论文数: 0引用数: 0
h-index: 0
机构:
Purdue Univ, Sch Mat Engn, W Lafayette, IN 47907 USA
Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USAPurdue Univ, Sch Mat Engn, W Lafayette, IN 47907 USA