Enhancement on forming complex three dimensional microstructures by a double-side multiple partial exposure method

被引:12
|
作者
Chung, Junwei [1 ]
Hsu, Wensyang [1 ]
机构
[1] Natl Chiao Tung Univ, Dept Mech Engn, Hsinchu 300, Taiwan
来源
关键词
D O I
10.1116/1.2781527
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This study presents a novel batch process based on standard lithography technology, called the double-side multiple partial exposure (DoMPE) method, which enhances the fabrication capability of three dimensional (313) photoresist micro structures. By incorporating gray-tone lithography and double-side exposure techniques, the proposed DoMPE scheme extends the multilevel morphology on both the front side and back side of the suspended photoresist microstructures. Back-side gray-tone lithography is achieved by depositing various appropriate thicknesses of Ti film on glass substrate that acts as the gray-tone mask. The process parameters, including metal film thickness, developed depth, exposure dosage, development time, and soft-bake time, are experimentally characterized. Different 3D photoresist microstructures with multiple levels on the front and back sides are successfully fabricated and presented here to show the enhancement effect using the proposed technique, including a microinductor structure and a vertical comb drive structure that demonstrate potential applications even on electrically conductive devices. (C) 2007 American Vacuum Society.
引用
收藏
页码:1671 / 1678
页数:8
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