In situ high-resolution transmission electron microscopy observation of solid-liquid interface of boron-doped silicon

Atomic behavior in the solid-liquid interface of boron-doped silicon has been examined by in-situ high-resolution transmission electron microscopy (HRTEM). We have successfully obtained the experimental observations of solid-liquid interface structures. We performed a structure analysis of a transition phase in solid-liquid interfaces by fast Fourier transformation (FFT) analysis, and obtained image simulations based on molecular dynamics (MD) calculations. We also observed reduction in lattice plane spacings and introduction of point defect clusters at the interfaces.