Computational Design of Dopants in CdTe Grain Boundaries for Efficient Photovoltaics

被引：0

作者：

Sen, Fatih G. ^{[1
]}

Paulauskas, Tadas ^{[2
]}

Sun, Ce ^{[3
]}

Kim, Moon ^{[3
]}

Klie, Robert F. ^{[2
]}

Chan, Maria K. Y. ^{[1
]}

机构：

[1] Argonne Natl Lab, Lemont, IL 60439 USA

[2] Univ Illinois, Chicago, IL 60607 USA

[3] Univ Texas Dallas, Richardson, TX 75080 USA

来源：

2017 IEEE 44TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC) | 2017年

关键词：

CdTe; photovoltaics; grain boundary; density functional theory; doping; SOLAR-CELLS;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

A fundamental understanding of the role of dopants in electronic structure of polycrystalline CdTe may lead to efficiency improvements. In the present work, we investigated effect of Cl, P and S doping on CdTe grain boundaries using first principles density functional theory (DFT) calculations. In addition to already known Cl, P and S can segregate in grain boundaries and incorporation of these elements can effectively reduce midgap states to increase the photovoltaic efficiency of CdTe. The methodology we presented can be used to design other alloying elements to CdTe to improve photovoltaic efficiency towards reaching the theoretical limit.

引用

页码：2759 / 2761

页数：3

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