Growth of HfSiOx films by vapor-liquid hybrid deposition utilizing Si(OC2H5)4/Hf(tOC4H9)4 multilayer adsorption

In this study, a HfSiOx deposition technique is described that takes advantage of the multilayer adsorption of Si(OC2H5)(4) (TEOS) and Hf((OC4H9)-O-t)(4) (HTB), followed by the hydrolysis of all of the layers in liquid water. A thickness distribution better than +/- 3% and a uniform Si:Hf ratio over the 4-in. wafer were achieved using this deposition technique. The n-type metal-insulator-semiconductor field-effect transistor (MISFET) incorporating the HfSiOx film exhibited well-behaved capacitance-voltage characteristics. The channel mobility of 81% compared well to the universal curve at an effective field of 0.8 MV cm(-1).