An application of Lotka-Volterra model to Taiwan's transition from 200 mm to 300 mm silicon wafers

被引:47
|
作者
Chiang, Su-Yun [1 ]
机构
[1] Feng Chia Univ, Grad Inst Management Technol, Taichung 40724, Taiwan
关键词
200 mm silicon wafers; 300 mm silicon wafers; IC foundry industry; Dynamic growth; Competition; Stability; Equilibrium; Lotka-Volterra model; Bass model; DYNAMIC COMPETITION ANALYSIS; INNOVATION; DIFFUSION; MARKET;
D O I
10.1016/j.techfore.2011.05.007
中图分类号
F [经济];
学科分类号
02 ;
摘要
In this paper, we explore the innovation growth of 200 mm and 300 mm silicon wafers from Taiwan. Using the historic data, we simulate the growth of the area of 200 mm and 300 mm silicon wafers manufactured in Taiwan by the competitive Lotka-Volterra model. The parameters in the Lotka-Volterra model estimated with the realistic data are obtained numerically. The dynamic growth of competitive relationship between 200 mm silicon wafers and 300 mm silicon wafers is then analyzed. To prove the performance of the model, we further compare the famous Bass model and the Lotka-Volterra model. We also perform the equilibrium analysis to determine the long-term stability state in the simulation trajectory. Our research exhibits that 200 mm silicon wafers and 300 mm silicon wafers show a prey-predator relationship under the assumption of natural competition in the global semiconductor market. From a managerial perspective, the coefficients in the Lotka-Volterra model of exponential growth, self-interaction and cross-interaction represent the strength of product attractiveness, niche capacity and interaction for two competition products. We also find that there exists a stable equilibrium state for 200 mm silicon wafers and 300 mm silicon wafers. The prey 200 mm generation does not disappear completely; it finally settles to a constant market alongside the predator 300 mm generation. (C) 2011 Elsevier Inc. All rights reserved.
引用
收藏
页码:383 / 392
页数:10
相关论文
共 12 条
  • [1] Current status of 200 mm and 300 mm silicon wafers
    Huff, HR
    McCormack, DW
    Au, C
    Messina, T
    Chan, K
    Goodall, RK
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1998, 37 (3B): : 1210 - 1216
  • [2] 40 Gbit/s silicon modulators fabricated on 200 mm and 300 mm SOI wafers.
    Marris-Morini, Delphine
    Baudot, Charles
    Fedeli, Jean-Marc
    Rasigade, Gilles
    Vulliet, Nathalie
    Souhaite, Aurelie
    Ziebell, Melissa
    Rivalin, Pierette
    Olivier, Segolene
    Crozat, Paul
    Bouville, David
    Menezo, Sylvie
    Boeuf, Frederic
    Vivien, Laurent
    SILICON PHOTONICS IX, 2014, 8990
  • [3] A modified Lotka-Volterra model for competition forecasting in Taiwan's retail industry
    Hung, Hui-Chih
    Tsai, Yun-San
    Wu, Muh-Cherng
    COMPUTERS & INDUSTRIAL ENGINEERING, 2014, 77 : 70 - 79
  • [4] Effects of Etch Rate on Scallop of Through-Silicon Vias (TSVs) in 200mm and 300mm Wafers
    Hsin, Yu-Chen
    Chen, Chien-Chou
    Lau, John H.
    Tzeng, Pei-Jer
    Shen, Shang-Hung
    Hsu, Yi-Feng
    Chen, Shang-Chun
    Wn, Chien-Ying
    Chen, Jui-Chin
    Ku, Tzu-Kun
    Kao, Ming-Jer
    2011 IEEE 61ST ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC), 2011, : 1130 - 1135
  • [5] Comparison of silicon epitaxial growth on the 200-and 300-mm wafers from trichlorosilane in Centura reactors
    Segal, AS
    Galyukov, AO
    Kondratyev, AV
    Sid'ko, AP
    Karpov, SY
    Makarov, YN
    Siebert, W
    Storck, P
    MICROELECTRONIC ENGINEERING, 2001, 56 (1-2) : 93 - 98
  • [6] Electrical and Morphological Characterization for High Integrated Silicon Interposer and Technology Transfer from 200 mm to 300mm Wafer
    Sunohara, Masahiro
    Miyairi, Ken
    Mori, Kenichi
    Murayama, Kei
    Charbonnier, Jean
    Assous, Myriam
    Bally, Jean-Philippe
    Mourier, Thierry
    Minoret, Stephane
    Mercier, Denis
    Toffoli, Alain
    Allain, Fabienne
    Martinez, Eugenie
    Feldis, Helene
    Simon, Gilles
    Higashi, Mitsutoshi
    2013 IEEE 63RD ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC), 2013, : 334 - 341
  • [7] Novel technique for contamination analysis around the edge, the bevel, and the edge exclusion area of 200 and 300mm silicon wafers
    Sparks, CM
    Gondran, CFH
    Lysaght, PS
    Donahue, JT
    PROCESS AND MATERIALS CHARACTERIZATION AND DIAGNOSTICS IN IC MANUFACTURING, 2003, 5041 : 99 - 104
  • [8] Low loss 40 Gbit/s silicon modulator based on interleaved junctions and fabricated on 300 mm SOI wafers
    Marris-Morini, D.
    Baudot, C.
    Fedeli, J-M.
    Rasigade, G.
    Vulliet, N.
    Souhaite, A.
    Ziebell, M.
    Rivallin, P.
    Olivier, S.
    Crozat, P.
    Le Roux, X.
    Bouville, D.
    Menezo, S.
    Boeuf, F.
    Vivien, L.
    OPTICS EXPRESS, 2013, 21 (19): : 22471 - 22475
  • [9] Policy options for the diffusion orbit of competitive innovationsan - an application of Lotka-Volterra equations to Japan's transition from analog to digital TV broadcasting
    Watanabe, C
    Kondo, R
    Nagamatsu, A
    TECHNOVATION, 2003, 23 (05) : 437 - 445
  • [10] 40Gbit/s Silicon Ring Resonator-based Modulator fabricated on 300mm SOI wafers
    Perez-Galacho, D.
    Marris-Morini, D.
    Baudot, C.
    Fedeli, J-M.
    Vulliet, N.
    Souhaite, A.
    Olivier, S.
    Le Roux, X.
    Boeuf, F.
    Vivien, L.
    2014 IEEE 11TH INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP), 2014,