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- [2] 40 Gbit/s silicon modulators fabricated on 200 mm and 300 mm SOI wafers. SILICON PHOTONICS IX, 2014, 8990
- [4] Effects of Etch Rate on Scallop of Through-Silicon Vias (TSVs) in 200mm and 300mm Wafers 2011 IEEE 61ST ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC), 2011, : 1130 - 1135
- [6] Electrical and Morphological Characterization for High Integrated Silicon Interposer and Technology Transfer from 200 mm to 300mm Wafer 2013 IEEE 63RD ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC), 2013, : 334 - 341
- [7] Novel technique for contamination analysis around the edge, the bevel, and the edge exclusion area of 200 and 300mm silicon wafers PROCESS AND MATERIALS CHARACTERIZATION AND DIAGNOSTICS IN IC MANUFACTURING, 2003, 5041 : 99 - 104
- [8] Low loss 40 Gbit/s silicon modulator based on interleaved junctions and fabricated on 300 mm SOI wafers OPTICS EXPRESS, 2013, 21 (19): : 22471 - 22475
- [10] 40Gbit/s Silicon Ring Resonator-based Modulator fabricated on 300mm SOI wafers 2014 IEEE 11TH INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP), 2014,