Study on Electrical Characteristics for Active Die Embedding Substrate

被引:0
|
作者
Kim, Hyunho [1 ]
机构
[1] Korea Adv Inst Sci & Technol, Ctr Integrated Smart Sensors, 313 ITC Bldg N1,291 Daehak Ro, Daejeon, South Korea
来源
2014 IEEE 16TH ELECTRONICS PACKAGING TECHNOLOGY CONFERENCE (EPTC) | 2014年
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents study on electrical characteristics of active die embedded substrate that is embedded active devices inside substrate. Active die embedding substrate samples are fabricated using embedding process that consists of lamination process, laser drilling at the electrode Cu pads of active device, electroless Cu plating formation process such as photolithography, electrolytic Cu plating, and etching. Interconnection reliability between external pad of substrate and pad of embedding active devices is evaluated by cross-section and in-circuit test of active die embedding substrate using temperature cycle (T/C) test (-55/+125 degrees C, 1000cycle).
引用
收藏
页码:204 / 208
页数:5
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