Evaluation of Mechanical Properties of Σ5(210)/[001] Tilt Grain Boundary with Self-Interstitial Atoms by Molecular Dynamics Simulation

被引:5
|
作者
Zhang, Liang [1 ]
Lu, Cheng [1 ]
Pei, Linqing [1 ]
Zhao, Xing [2 ]
Zhang, Jie [1 ]
Tieu, Kiet [1 ]
机构
[1] Univ Wollongong, Sch Mech Mat & Mechatron Engn, Wollongong, NSW 2522, Australia
[2] Cent South Univ, State Key Lab High Performance Complex Mfg, Changsha 410083, Hunan, Peoples R China
关键词
DEFECT ACCUMULATION; RADIATION-DAMAGE; PHASE-TRANSFORMATIONS; ATOMISTIC SIMULATION; HE INTERSTITIALS; ALLOYS DRIVEN; POINT-DEFECTS; IRRADIATION; COPPER; NEUTRON;
D O I
10.1155/2017/8296458
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Grain boundary (GB) can serve as an efficient sink for radiation-induced defects, and therefore nanocrystallinematerials containing a large fraction of grain boundaries have been shown to have improved radiation resistance compared with their polycrystalline counterparts. However, the mechanical properties of grain boundaries containing radiation-induced defects such as interstitials and vacancies are not well understood. In this study, we carried outmolecular dynamics simulations with embedded-atommethod (EAM) potential to investigate the interaction of Sigma 5(210)/[001] symmetric tilt GB in Cu with various amounts of self-interstitial atoms. The mechanical properties of the grain boundary were evaluated using a bicrystal model by applying shear deformation and uniaxial tension. Simulation results showed that GB migration and GB sliding were observed under shear deformation depending on the number of interstitial atoms that segregated on the boundary plane. Under uniaxial tension, the grain boundary became a weak place after absorbing self-interstitial atoms where dislocations and cracks were prone to nucleate.
引用
收藏
页数:11
相关论文
共 50 条
  • [1] Molecular dynamics simulation of the diffusion of self-interstitial atoms and interstitial loops under temperature gradient field in tungsten
    Fang, Jingzhong
    Liu, Lixia
    Gao, Ning
    Hu, Wangyu
    Gao, Fei
    Deng, Huiqiu
    JOURNAL OF APPLIED PHYSICS, 2020, 128 (06)
  • [2] Molecular dynamics simulation of the grain boundary sliding behaviour for Al Σ5 (210)
    Cheng, Kuiyu
    Tieu, Kiet
    Lu, Cheng
    Zheng, Xuan
    Zhu, Hongtao
    COMPUTATIONAL MATERIALS SCIENCE, 2014, 81 : 52 - 57
  • [3] Atomic diffusion in the Fe [001] Σ=5 (310) and (210) symmetric tilt grain boundary
    Wen, Yan-Ni
    Zhang, Yan
    Zhang, Jian-Min
    Xu, Ke-Wei
    COMPUTATIONAL MATERIALS SCIENCE, 2011, 50 (07) : 2087 - 2095
  • [4] Sigma 5(210)/[001] symmetric tilt grain boundary in yttrium aluminum garnet
    Campbell, GH
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1996, 79 (11) : 2883 - 2891
  • [5] Vibrational properties of a Σ5(310)[001] NiO grain boundary:: a local analysis by molecular dynamics simulation
    Karakasidis, TE
    SURFACE SCIENCE, 2002, 515 (01) : 1 - 12
  • [6] Vibrational properties of a Σ5(310)[001] NiO grain boundary as a function of temperature:: A molecular dynamics simulation
    Karakasidis, TE
    COMPUTER PHYSICS COMMUNICATIONS, 2002, 147 (1-2) : 198 - 201
  • [7] Computer simulation and high resolution electron microscopy study of the Σ=5 (210) [001] symmetric tilt grain boundary in molybdenum
    Bacia, M
    Morillo, J
    Pénisson, JM
    Pontikis, V
    INTERGRANULAR AND INTERPHASE BOUNDARIES IN MATERIALS, IIB98, 1999, 294-2 : 203 - 206
  • [8] Diffusion Characteristics of Clusters of Self-Interstitial Atoms in Vanadium: Molecular Dynamics Data
    D. N. Demidov
    A. B. Sivak
    P. A. Sivak
    Physics of Metals and Metallography, 2023, 124 : 487 - 495
  • [9] Diffusion Characteristics of Clusters of Self-Interstitial Atoms in Vanadium: Molecular Dynamics Data
    Demidov, D. N.
    Sivak, A. B.
    Sivak, P. A.
    PHYSICS OF METALS AND METALLOGRAPHY, 2023, 124 (05): : 487 - 495
  • [10] Low-energy configurations of the Σ=5 (210)[001] tilt grain boundary in FCC crystals
    Grigoriadis, P
    Karakostas, T
    Komninou, P
    Pontikis, V
    INTERGRANULAR AND INTERPHASE BOUNDARIES IN MATERIALS, IIB98, 1999, 294-2 : 177 - 180