Calculation of electronic structure and electronic density of dielectric BaTiO3

被引:0
|
作者
Salehi, H [1 ]
Hosseini, SM [1 ]
Shahtahmasebi, N [1 ]
机构
[1] Shahid Chamran Univ, Dept Phys, Ahvaz, Iran
关键词
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暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The electronic structure and electron density, in tetragonal crystal BaTiO3 are studied using full potential-linearized augmented plane wave method in the framework density functional theory with the generalized gradient approximation. The results show a direct band gap of 2.3eV at the F point in the Brillouin zone. The electron density distribution indicated that the bond between Ba and TiO3 is often ionic and bond between Ti and O is covalent.
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页码:714 / 717
页数:4
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