Industrial View of III-V Devices Compact Modeling for Circuit Design

被引：9
|
作者：
Zampardi, Peter J. [1 ]
Kharabi, Faramarz [2 ]
机构：
[1] Qorvo, Newbury Pk, CA 91320 USA
[2] Qorvo, Greensboro, NC 27409 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2019年 / 66卷 / 01期
关键词：
HEMTs; heterojunction bipolar transistor; integrated circuit modeling; semiconductor device modeling; GAAS; TECHNOLOGY;
D O I：
10.1109/TED.2018.2884153
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a commercial or industrial view of III-V compact models for circuit design. We contrast the requirements of III-V modeling to those of silicon. The differences in requirements are strongly rooted in the applications that III-V devices are used in the end user of III-V models and the differences in the "ecosystems" of the technologies. These differences create both challenges and opportunity for the III-V modeling community.
引用
收藏
页码：28 / 33
页数：6
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