Alternative Metals for Advanced Interconnects

被引：0

作者：

Adelmann, Christoph ^{[1
]}

Wen, Liang Gong ^{[1
]}

Peter, Antony Premkumar ^{[1
]}

Siew, Yong Kong ^{[1
]}

Croes, Kristof ^{[1
]}

Swerts, Johan ^{[1
]}

Popovici, Mihaela ^{[1
]}

Sankaran, Kiroubanand ^{[1
]}

Pourtois, Geoffrey ^{[1
,2
]}

Van Elshocht, Sven ^{[1
]}

Bommels, Jurgen ^{[1
]}

Tokei, Zsolt ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] Univ Antwerp, Dept Chem, PLASMANT, B-2610 Antwerp, Belgium

来源：

2014 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE / ADVANCED METALLIZATION CONFERENCE (IITC/AMC) | 2014年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We discuss the selection criteria for alternative metals in order to fulfill the requirements necessary for interconnects at half pitch values below 10 nm. The performance of scaled interconnects using transition metal germanides and CoAl alloys as metallization are studied and compared to conventional Cu and W interconnects.

引用

页码：173 / 175

页数：3

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