Single-chip RF front-end MMIC using InGaAs E/D-pHEMT for 3.5 GHz WiMAX applications

被引：0

作者：

Hsu, Yu-Cheng ^{[1
]}

Wu, Ping-Hsun ^{[1
]}

Chen, Cheng-Chung ^{[1
]}

Li, Jian-Yu ^{[1
]}

Lee, Sheng-Feng ^{[1
]}

Ho, Wu-Jing ^{[2
]}

Lin, Cheng-Kuo ^{[2
]}

机构：

[1] Ind Technol Res Inst, Informat & Commun Res Labs, 195 Sec 4,Chung Hsing Rd, Hsinchu 310, Taiwan

[2] WIN Semicond Corp, Taoyuan, Taiwan

来源：

2007 EUROPEAN MICROWAVE CONFERENCE, VOLS 1-4 | 2007年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A single chip RF front-end MMIC is designed, developed and measured for 3.5GHz WiMAX application. The proposed MMIC integrated PA, LNA and SPDT switch by utilizing the cost-effective 0.5um InGaAs E/D-pHEMT process of WINs Corp.. In this paper, D-pHEMT are applied for switch designed and E-pHEMT are applied for LNA and PA design. The LNA exhibits 1.8 dB of noise figure, 16.7 dB of gain, -10 dBm of input P1dB and 3 dBm of IIP3. The SPDT switch shows 0.8 dB of insertion loss, 20 dB of isolation and 27.4 dBm of input P1dB. The PA demonstrates the 29dBm of output P1dB, 2.7% of EVM at 24.4 dBm with 25.6 dB of gain and over15% of PAE. To the best of our knowledge, this is the first solution on 3.5 GM WIMAX PA, LNA and SPDT switch integrated in a single chip with InGaAs E/D-pHEMT.

引用

页码：1217 / +

页数：2

共 44 条

[1] Single-chip RF front-end MMIC using InGaAs E/D-pHEMT for 3.5 GHz WiMAX applications
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Lee, Sheng-Feng
Ho, Wu-Jing
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