In situ observation of composition profiles in the solution by X-ray penetration method

被引：10

作者：

Hayakawa, Yasuhiro ^{[1
]}

Hikida, Takuya ^{[1
]}

Morii, Hisashi ^{[1
]}

Konno, Akiko ^{[1
]}

Chen, Chung-Hao ^{[1
]}

Arafune, Kouji ^{[1
]}

Kawai, Hideki ^{[1
]}

Koyama, Tadanobu ^{[1
]}

Momose, Yoshimi ^{[1
]}

Ozawa, Tetsuo ^{[2
]}

Aoki, Toru ^{[1
]}

机构：

[1] Shizuoka Univ, Res Inst Elect, Naka Ku, Hamamatsu, Shizuoka 4328011, Japan

[2] Shizuoka Inst Sci & Technol, Dept Elect Engn, Shizuoka 4378555, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2008年 / 310卷 / 7-9期

关键词：

mass transfer; growth from solutions; gallium compounds; semiconducting III-V materials;

D O I：

10.1016/j.jcrysgro.2007.12.010

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The X-ray penetration intensity during the diffusion process of NH4Br into H2O was measured by a CdTe line sensor as a function of time and it was converted to the NH4Br composition using a calibration line. The diffusion coefficient of (NHBr)-Br-4 into H2O was estimated to be 2.2 x 10(-5) cm(2)/s by comparing the calculated results. The method was applied to the growth of InGaSb from the In-Ga-Sb solution. The indium composition profiles in the solution were measured and growth of InGaSb from the In-Ga-Sb solution was observed from the change of X-ray intensity. The growth region of InGaSb crystal was confirmed by the electron probe microanalysis. It was demonstrated that the X-ray penetration method was a powerful method to measure the composition profiles in the solution. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：1487 / 1492

页数：6

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