Surface reactivity measurements for OH radicals during deposition of SiO2 from tetraethoxysilane/O-2 plasmas

被引：18
|
作者：
Bogart, KHA [1 ]
Cushing, JP [1 ]
Fisher, ER [1 ]
机构：
[1] COLORADO STATE UNIV,DEPT CHEM,FT COLLINS,CO 80523
来源：
CHEMICAL PHYSICS LETTERS | 1997年 / 267卷 / 3-4期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1016/S0009-2614(97)00109-7
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The surface reactivity of OH radicals has been measured during plasma deposition of SiO2 from tetraethoxysilane (TEOS)-based plasmas by the Imaging of Radicals Interacting with Surfaces (IRIS) method. This technique combines molecular beam and plasma technologies with spatially-resolved laser-induced fluorescence to provide two dimensional images of radical species during surface modification. OH radicals were not detected in a 100% TEOS plasma, but were observed in 20% TEOS/80% O-2 plasmas. The reactivity of OH is measured as 0.40 +/- 0.10 while depositing SiO2 on a 300 K Si substrate. This intermediate reactivity indicates that OH may play a role in formation of SiO2 films.
引用
收藏
页码：377 / 383
页数：7
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