Physics of thin-film ferroelectric oxides

被引:1993
作者
Dawber, M [1 ]
Rabe, KM
Scott, JF
机构
[1] Univ Geneva, DPMC, CH-1211 Geneva, Switzerland
[2] Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08854 USA
[3] Univ Cambridge, Dept Earth Sci, Cambridge CB2 3EQ, England
关键词
D O I
10.1103/RevModPhys.77.1083
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
This review covers important advances in recent years in the physics of thin-film ferroelectric oxides, the strongest emphasis being on those aspects particular to ferroelectrics in thin-film form. The authors introduce the current state of development in the application of ferroelectric thin films for electronic devices and discuss the physics relevant for the performance and failure of these devices. Following this the review covers the enormous progress that has been made in the first-principles computational approach to understanding ferroelectrics. The authors then discuss in detail the important role that strain plays in determining the properties of epitaxial thin ferroelectric films. Finally, this review ends with a look at the emerging possibilities for nanoscale ferroelectrics, with particular emphasis on ferroelectrics in nonconventional nanoscale geometries.
引用
收藏
页码:1083 / 1130
页数:48
相关论文
共 407 条
[1]   Electric field effect in correlated oxide systems [J].
Ahn, CH ;
Triscone, JM ;
Mannhart, J .
NATURE, 2003, 424 (6952) :1015-1018
[2]   Self-patterning nano-electrodes on ferroelectric thin films for gigabit memory applications [J].
Alexe, M ;
Scott, JF ;
Curran, C ;
Zakharov, ND ;
Hesse, D ;
Pignolet, A .
APPLIED PHYSICS LETTERS, 1998, 73 (11) :1592-1594
[3]   Switching properties of self-assembled ferroelectric memory cells [J].
Alexe, M ;
Gruverman, A ;
Harnagea, C ;
Zakharov, ND ;
Pignolet, A ;
Hesse, D ;
Scott, JF .
APPLIED PHYSICS LETTERS, 1999, 75 (08) :1158-1160
[4]  
ALEXE M, 1999, COMMUNICATION
[5]   Thermodynamics of polydomain heterostructures. III. Domain stability map [J].
Alpay, SP ;
Roytburd, AL .
JOURNAL OF APPLIED PHYSICS, 1998, 83 (09) :4714-4723
[6]  
Andreev A. F., 1981, JETP LETT, V53, P1063
[7]   Tunability of the dielectric response of epitaxially strained SrTiO3 from first principles -: art. no. 024102 [J].
Antons, A ;
Neaton, JB ;
Rabe, KM ;
Vanderbilt, D .
PHYSICAL REVIEW B, 2005, 71 (02)
[8]   INTERNAL BIAS IN FERROELECTRIC CERAMICS - ORIGIN AND TIME-DEPENDENCE [J].
ARLT, G ;
NEUMANN, H .
FERROELECTRICS, 1988, 87 :109-120
[9]   The double layer structure at the metal-solid electrolyte interface [J].
Armstrong, RD ;
Horrocks, BR .
SOLID STATE IONICS, 1997, 94 (1-4) :181-187
[10]   Ab initio calculations of doping mechanisms in SrTiO3 [J].
Astala, RK ;
Bristowe, PD .
MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING, 2004, 12 (01) :79-90