Chemical disorder in polycrystalline Ni2MnGa thin films

被引:0
|
作者
Salvador, A. J. [1 ]
Neckel, I. T. [2 ]
Graff, I. L. [1 ]
Mosca, D. H. [1 ]
机构
[1] Univ Fed Parana UFPR, Dept Fis, BR-81531980 Curitiba, Parana, Brazil
[2] Lab Nacl Luz Sincrotron LNLS, Ctr Nacl Pesquisa Energia Mat CNPEM, BR-13083970 Campinas, SP, Brazil
关键词
Chemical disorder; Thin films; EXAFS; Magnetic properties; GA;
D O I
10.1016/j.jallcom.2021.162970
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The chemical disorder in magnetic shape memory alloys it is an important parameter that impacts on its magneto-mechanical and electronic properties. In this work, Ni2MnGa thin films were deposited on flexible glass substrates by using DC magnetron sputtering technique. The short-range order/disorder was in-vestigated by means of Extended X-ray absorption fine structure (EXAFS) and X-ray absorption near-edge structure (XANES) measurements using at Mn K-edge. Polycrystalline samples of Ni2MnGa with fixed stoichiometry exhibit L2(1) structure with low residual stress and similar grain sizes. A phenomenological model taking into account three chemical order parameters associated with main chemical anti-site disorders and reliable lattice tetragonal distortions extracted from X-ray diffraction analyses was used to perform systematic computational simulations. The results reveal the persistence of local tetragonal distortions of the crystal structure with L21 structure under when increasing annealing temperatures that are accompanied by a systematic decrease of the anti-site disorder between Ni and Mn atoms and substitutions between Ni and Ga atoms, with the orderly occupation of the atomic sites of Mn and Ga remaining unstable. This work also shows presents a consistent model to perform quantitative analyses of the chemical anti-site disorders through EXAFS measurements in the on Ni2MnGa polycrystalline thin films that preserve both the stoichiometry and the L2(1) crystalline structure. (C) 2021 Elsevier B.V. All rights reserved.
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页数:6
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