Zn doping of InP, InAsP/InP, and InAsP/InGaAs heterostructures through metalorganic vapor phase diffusion (MOVPD)

被引：9
|
作者：
Vanhollebeke, K [1 ]
D'Hondt, M [1 ]
Moerman, I [1 ]
Van Daele, P [1 ]
Demeester, P [1 ]
机构：
[1] State Univ Ghent, IMEC, Dept Informat Technol, B-9000 Ghent, Belgium
来源：
JOURNAL OF ELECTRONIC MATERIALS | 2001年 / 30卷 / 08期
关键词：
MOVPD; Zn diffusion; InP; InAsP; III-V; Zn doping;
D O I：
10.1007/BF02657716
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Zinc incorporation by post-growth metalorganic vapor phase diffusion (MOVPD) is used to achieve high p-doping, which is desirable for the fabrication of photodiodes. Diethylzinc (DEZ) is used as precursor and Zn is diffused into InP and InAs0.6P epitaxial layers grown by low pressure metalorganic vapor phase epitaxy (MOVPE) on different substrate orientations, enabling the investigation of the dislocation density on the Zn incorporation. Diffusion depths are measured using cleave-and-stain techniques, resistivity measurements, electrochemical profiling, and secondary ion mass spectroscopy. High hole concentrations of, respectively, 1.7 X 10(19) and 6 X 10(18) cm(-3), are obtained for, respectively, InAs0.60P and InP. The diffusion coefficients are derived and the Zn diffusion is used for the fabrication of lattice-mismatched planar PIN InAsP/InGaAs photodiodes.
引用
收藏
页码：951 / 959
页数：9
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