Quantum conductance and magnetic properties in ZnO based resistive switching memory

A series of Mn doped ZnO films deposited under various oxygen pressures showed different resistive switching behaviors. The films deposited under oxygen pressures of 2 Pa and 10 Pa displayed normal bipolar resistive switching behavior, while no clear resistive switching could be observed for the films deposited under 40 Pa oxygen pressure. The films deposited under 20 Pa oxygen pressure demonstrated a typical quantum conductance behavior during the resistive switching process. Based on X-ray diffraction and scanning electron microscopy analysis, we ascribe this conductance quantization behavior to the combined effects of the high quality with regular hexagonal grains and to the relatively large grain size, as well as to the low oxygen vacancy concentration of the film. In addition, a magnetic change was also observed in this film during the resistive switching process. These findings may open a new window for applications of binary metal oxide films in data storage technologies and low-power spintronics. (C) 2016 Elsevier B.V. All rights reserved.