Crested 2D materials for optoelectronics and photonics

被引:19
|
作者
Luo, Siwei [1 ,2 ]
Guo, Gencai [1 ,2 ]
Qi, Xiang [1 ,2 ]
Liu, Weiyang [1 ,2 ]
Tang, Han [1 ,2 ]
Bao, Qiaoliang [3 ,4 ]
Zhong, Jianxin [1 ,2 ]
机构
[1] Xiangtan Univ, Hunan Key Lab Micronano Energy Mat & Devices, Lab Quantum Engn & Micronano Energy Technol, Xiangtan 411105, Hunan, Peoples R China
[2] Xiangtan Univ, Sch Phys & Optoelect, Xiangtan 411105, Hunan, Peoples R China
[3] Univ Shanghai Sci & Technol, Inst Energy Mat Sci IEMS, Shanghai 200093, Peoples R China
[4] Nanjing Light Laser Technol Co Ltd, Nanjing 210032, Jiangsu, Peoples R China
基金
中国国家自然科学基金;
关键词
2D materials; Crested; Strain; Optoelectronics; Photonics; 2ND-HARMONIC GENERATION; ELECTRONIC-STRUCTURE; STRAIN; GRAPHENE; MONOLAYER; SEMICONDUCTOR; INTEGRATION; TRANSITION; MOS2; HETEROSTRUCTURE;
D O I
10.1016/j.pquantelec.2022.100436
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
To manipulate the electrical and optical properties of ultrathin two-dimensional (2D) layered materials, many approaches including the engineering of strain, doping, defects, and chemical absorption have been developed in recent years. However, the researches on crested substrates, which cause strains and emerging functionalities from the rigid substrate are limited. It shows great potential in improving carrier mobility, promoting charge transfer and charge injection, and decreasing the contact resistance of 2D material devices. Here, recent advances on crested sub-strates in 2D material-based optoelectronic and photonic devices are reviewed. These de-velopments are classified in three aspects: the generation of crested structure in 2D materials; the strain-induced effect and more effects (plasmonic resonance, charge transfer, hot electron in-jection, optical effect) due to the crested surface; the state-of-the-art of the performance enhancement in 2D materials optoelectronics and photonics. We also present our perspectives on the physics and potential applications based on the crested structures.
引用
收藏
页数:12
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