Ultimate lithography using proximal probes for single electron device fabrication or nano-object addressing

被引：0
|
作者：
Tonneau, D [1 ]
Clément, N [1 ]
Houel, A [1 ]
Dallaporta, H [1 ]
Safarov, V [1 ]
机构：
[1] Fac Sci Luminy, GPEC, F-13288 Marseille 09, France
来源：
2003 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS | 2003年
关键词：
D O I：
10.1109/SMICND.2003.1251335
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The high resolution offered by Scanning Probe Microscopes suggested that these equipment could be used to pattern features of controlled geometries at a nanometric scale, not reachable by conventional lithography techniques. Two processes for metallic or semiconducting nanofeatures patterning by Scanning Tunnelling Microscope or Atomic Force Microscope are presented.
引用
收藏
页码：3 / 12
页数：10
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