Type-I and type-II interband transitions in CdSe/ZnTe quantum well structures

被引：16
|
作者：
Haetty, J
Lee, EH
Luo, H
Petrou, A [1 ]
Warnock, J
机构：
[1] SUNY Buffalo, Dept Phys, Buffalo, NY 14260 USA
[2] IBM Corp, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA
来源：
SOLID STATE COMMUNICATIONS | 1998年 / 108卷 / 04期
关键词：
quantum wells; semiconductors; optical properties; recombination and trapping; luminescence;
D O I：
10.1016/S0038-1098(98)00349-4
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We have studied the luminescence intensity associated with type-I and type-II interband transitions in several CdSe/ZnTe quantum well structures as a function of CdSe layer thickness. It was found that as the CdSe layers become wider, the intensity of the type-I transition increases, while that of the type-II transition decreases. These results are analyzed in terms of a variational calculation which takes into account the Coulomb interaction between the electrons and holes that participate in the interband transitions. (C) 1998 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：205 / 209
页数：5
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