Influence of pulse width on electroluminescence and junction temperature of AlInGaN deep ultraviolet light-emitting diodes

被引：25
|
作者：
Zhang, J. C. [1 ]
Zhu, Y. H. [1 ]
Egawa, T. [1 ]
Sumiya, S. [2 ]
Miyoshi, M. [2 ]
Tanaka, M. [2 ]
机构：
[1] Nagoya Inst Technol, Res Ctr Nanodevice & Syst, Showa Ku, Nagoya, Aichi 4668555, Japan
[2] NGK Insulators Ltd, Mizuho Ku, Nagoya, Aichi 4678530, Japan
来源：
APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 19期
关键词：
D O I：
10.1063/1.2931698
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The behavior of electroluminescence (EL) and junction temperature of AlInGaN deep ultraviolet light-emitting diodes under pulse- width modulation is investigated. The redshift of both emissions from quantum-well (P1) and localized (P2) states in the EL spectra and the increase of intensity ratio of P1 to P2 are observed with the increase of duty cycle. The photoluminescence of p-GaN contact layer is adopted to measure the junction temperature, which shows a linear relation with the duty cycle. Meanwhile, the duty cycle coefficient of junction temperature increases with the increase of injection current. The EL behaviors are explained by the thermal effect induced by pulse current at high duty cycle. (C) 2008 American Institute of Physics.
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页数：3
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