A simple PAN-based fabrication method for microstructured carbon electrodes for organic field-effect transistors

被引:26
|
作者
Jung, Chan-Hee [1 ,2 ]
Kim, Wan-Joong [1 ,4 ]
Jung, Chang-Hee [1 ]
Hwang, In-Tae [1 ]
Khim, Dongyoon [2 ]
Kim, Dong-Yu [2 ]
Lee, Jae-Suk [2 ]
Ku, Bon-Cheol [4 ]
Choi, Jae-Hak [3 ]
机构
[1] Korea Atom Energy Res Inst, Res Div Ind & Environm, Jeoliabuk Do 580185, South Korea
[2] Gwangju Inst Sci & Technol, Dept Adv Mat Engn, Gwangju 500712, South Korea
[3] Chungnam Natl Univ, Dept Polymer Sci & Engn, Taejon 305764, South Korea
[4] Korea Inst Sci & Technol, Inst Adv Composites Mat, Carbon Convergence Mat Res Ctr, Jeollabuk Do 565902, South Korea
基金
新加坡国家研究基金会;
关键词
ION-BEAM; THERMAL STABILIZATION; THIN-FILMS; POLYACRYLONITRILE; LITHOGRAPHY; GRAPHENE; FIBER; RESIST; OXIDE; AIR;
D O I
10.1016/j.carbon.2015.02.040
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Facile and efficient fabrication of polyacrylonitrile (PAN)-based conductive graphitic carbon microstructures (GCMs) and their application to the electrodes of organic field-effect transistors (OFETs) is described. The PAN thin films spin-coated on a SiO2-deposited Si wafer was irradiated through a pattern mask with 150 key H+ ions at various fluences, and subsequently developed to form PAN microstructures. The resulting PAN microstructures were carbonized at various temperatures to create the GCMs. The analytical results revealed that the optimized fluence and carbonization temperature for well-defined GCMs was 3 x 10(15) - ions cm(-2) and 100 degrees C, respectively, and that the resulting GCMs created at the optimized condition exhibited a greatly low surface roughness of 0.36 nm, a good electrical conductivity of about 600 S cm(-1), and a high work function of 5.11 eV. Noticeably, the GCM electrodes-based p-type OFET showed a comparable performance to that of the gold electrode-based one, demonstrating that the practical use of GCMs as cheap electrodes to replace expensive metallic ones for organic electronic devices. (C) 2015 Elsevier Ltd. All rights reserved.
引用
收藏
页码:257 / 268
页数:12
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