Enhanced electromechanical coupling in SAW resonators based on sputtered non-polar Al0.77Sc0.23N (11(2)over-bar0) thin films

被引：38

作者：

Ding, Anli ^{[1
]}

Kirste, Lutz ^{[1
]}

Lu, Yuan ^{[1
,4
]}

Driad, Rachid ^{[1
]}

Kurz, Nicolas ^{[2
]}

Lebedev, Vadim ^{[1
]}

Christoph, Tim ^{[1
]}

Feil, Niclas M. ^{[2
]}

Lozar, Roger ^{[1
]}

Metzger, Thomas ^{[3
]}

Ambacher, Oliver ^{[1
]}

Zukauskaite, Agne ^{[1
]}

机构：

[1] Fraunhofer Inst Appl Solid State Phys IAF, Tullastr 72, D-79108 Freiburg, Germany

[2] Univ Freiburg, Dept Sustainable Syst Engn, Emmy Noether Str 2, D-79110 Freiburg, Germany

[3] Qualcomm Germany RFFE GmbH, Anzinger Str 13, D-81671 Munich, Germany

[4] Evatec China Ltd, 2002A,Tower B,Dawning Ctr,Hongbaoshi Rd 500, Shanghai 201103, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2020年 / 116卷 / 10期

关键词：

Non-polar a-plane Al0.77Sc0.23N 11 2 ¯ 0 thin films were prepared by magnetron sputter epitaxy on r-plane Al2O3 (1 1 ¯ 02) substrates. Different substrate off-cut angles were compared; and the off-cut angle of 3° resulted in the best structural quality of the AlScN layer. Structural characterization by x-ray diffraction confirmed that single phase; wurtzite-type; a-plane AlScN 11 2 ¯ 0; surface acoustic wave resonators were fabricated with wavelengths λ = 2-10 μm (central frequency up to 1.7 GHz) with two orthogonal in-plane propagation directions. A strong dependence of electromechanical coupling on the in-plane orientation was observed. Compared to conventional c-plane AlScN based resonators; an increase of 185-1000% in the effective electromechanical coupling was achieved with only a fractional decrease of © 2020 Author(s);

D O I：

10.1063/1.5129329

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Non-polar a-plane Al0.77Sc0.23N 0 thin films were prepared by magnetron sputter epitaxy on r-plane Al2O3 substrates. Different substrate off-cut angles were compared, and the off-cut angle of 3 degrees resulted in the best structural quality of the AlScN layer. Structural characterization by x-ray diffraction confirmed that single phase, wurtzite-type, a-plane AlScN , surface acoustic wave resonators were fabricated with wavelengths lambda = 2-10 mu m (central frequency up to 1.7 GHz) with two orthogonal in-plane propagation directions. A strong dependence of electromechanical coupling on the in-plane orientation was observed. Compared to conventional c-plane AlScN based resonators, an increase of 185-1000% in the effective electromechanical coupling was achieved with only a fractional decrease of <10.5% in series resonance frequency. (C) 2020 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http:// creativecommons.org/licenses/by/4.0/).

引用

页数：5

共 28 条

[1] Non-Polar a-plane AlScN(11(2)over-bar0) Thin Film Based SAW Resonators with Significantly Improved Electromechanical Coupling
Ding, Anli
Driad, Rachid
Lu, Yuan
Feil, Niclas M.
Kirste, Lutz
Christoph, Tim
Ambacher, Oliver
Zukauskaite, Agne
PROCEEDINGS OF THE 2020 IEEE INTERNATIONAL ULTRASONICS SYMPOSIUM (IUS), 2020,
[2] A reproducible low temperature chemical solution deposition of non-polar [11(2)over-bar0] and [10(1)over-bar0] ZnO films for optoelectronic applications
Qi, Lin
Shahzad, M. Babar
Qi, Yang
CRYSTENGCOMM, 2016, 18 (35): : 6573 - 6578
[3] Growth of single crystal non-polar (11(2)over-bar0) ZnSnN2 films on sapphire substrate
Duc Duy Le
Trong Si Ngo
Hong, Soon-Ku
APPLIED SURFACE SCIENCE, 2019, 481 : 819 - 824
[4] Growth of non-polar (11(2)over-bar0) and semi-polar (11(2)over-bar6) AlN and GaN films on the R-plane sapphire
Chandrasekaran, R.
Ozcan, A. S.
Deniz, A.
Ludwig, K. F.
Moustakas, T. D.
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 5, 2007, 4 (05): : 1689 - +
[5] The microstructure of non-polar a-plane (11(2)over-bar0) InGaN quantum wells
Griffiths, James T.
Oehler, Fabrice
Tang, Fengzai
Zhang, Siyuan
Fu, Wai Yuen
Zhu, Tongtong
Findlay, Scott D.
Zheng, Changlin
Etheridge, Joanne
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Kappers, Menno J.
Humphreys, Colin J.
Oliver, Rachel A.
JOURNAL OF APPLIED PHYSICS, 2016, 119 (17)
[6] Evaluation of growth methods for the heteroepitaxy of non-polar (11(2)over-bar0) GAN on sapphire by MOVPE
Oehler, F.
Sutherland, D.
Zhu, T.
Emery, R.
Badcock, T. J.
Kappers, M. J.
Humphreys, C. J.
Dawson, P.
Oliver, R. A.
JOURNAL OF CRYSTAL GROWTH, 2014, 408 : 32 - 41
[7] Electromechanical coupling coefficient k15 of (11(2)over-bar0) textured ZnO films
Yanagitani, T
Mishima, N
Matsukawa, M
Watanabe, Y
2005 IEEE ULTRASONICS SYMPOSIUM, VOLS 1-4, 2005, : 1824 - 1827
[8] Growth evolution and pendeo-epitaxy of non-polar AlN and GaN thin films on 4H-SiC (11(2)over-bar0)
Bishop, S. M.
Park, J. -S.
Gu, J.
Wagner, B. P.
Reltmeier, Z. J.
Batchelor, D. A.
Zakharov, D. N.
Liliental-Weber, Z.
Davis, R. F.
JOURNAL OF CRYSTAL GROWTH, 2007, 300 (01) : 83 - 89
[9] Defect reduction in non-polar (11(2)over-bar0) GaN grown on (1(1)over-bar02) sapphire
Johnston, Carol F.
Kappers, Menno J.
Moram, Michelle A.
Hollander, Jonathan L.
Humphreys, Colin J.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2009, 206 (06): : 1190 - 1193
[10] Ab initio density functional theory study of non-polar (10(1)over-bar0), (11(2)over-bar0) and semipolar {20(2)over-bar1} GaN surfaces
Mutombo, P.
Romanyuk, O.
JOURNAL OF APPLIED PHYSICS, 2014, 115 (20)

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