High porosity Mo doped BiVO4 film by vanadium re-substitution for efficient photoelectrochemical water splitting

Bismuth vanadate (BiVO4) is one of the most studied photoanodes whose photoelectrochemical (PEC) performance is limited by the sluggish charge mobility and substantial recombination losses. Here, a high porosity Mo doped BiVO4 film was synthesized by excess Mo doping and following vanadium re-substitution. The as-prepared BiVO4 based photoanode has large contact area between the electrolyte and the film due to the dissolution of excess Mo, shown by the results of electrochemically active surface area tests. As a result, the photocurrent of VMo-BiVO4 is 6.12 mA/cm(2) at 1.23 V vs. the reversible hydrogen electrode (RHE) in 0.2 M KPi + 0.2 M Na2SO3 with the charge separation efficiency of similar to 96%, and the photocurrent of VMo-BiVO4 (3.18 mA/cm(2) at 1.23 V vs. RHE) is 6.91 times of pristine BiVO4 in 0.2 M KPi. This approach demonstrated that a reasonable doping structure design could guarantee PEC water splitting with high performance.