Room-temperature, monolithic, electrically-pumped type-L quantum-well Sb-based VCSELs emitting at 2.3 μm

被引：12
|
作者：
Cerutti, L. [1 ]
Ducanchez, A. [1 ]
Grech, P. [1 ]
Garnache, A. [1 ]
Genty, F. [1 ]
机构：
[1] Univ Montpellier 2, CNRS, UMR 5214, IES,CC 067, F-34095 Montpellier, France
来源：
ELECTRONICS LETTERS | 2008年 / 44卷 / 03期
关键词：
D O I：
10.1049/el:20083424
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An all-epitaxial monolithic vertical cavity surface emitting laser grown on GaSb substrate is presented. The structure is composed of two n-doped AlAsSb/GaSb distributed Bragg reflectors, a type-I GaInAsSb/AlGaAsSb multi-quantum-well active region and a tunnel junction. Quasi continuous-wave laser operation is demonstrated at 2.3 mu m up to room temperature. Threshold current densities of 0.8 and 0.6 kA/cm(2) are obtained at 300 and 280 K for 80 mu m-diameter devices (1 mu s pulses, 10% duty cycle). A peak output optical power of 2 mW was achieved at 280 K.
引用
收藏
页码：203 / 204
页数：2
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