TCAD Modeling and Simulation of Non-Resonant Plasmonic THz Detector Based on Asymmetric Silicon MOSFETs

被引：0
|
作者：
Ryu, Min Woo [1 ]
Lee, Jeong Seop [1 ]
Park, Kibog [1 ]
Kim, Kyung Rok [1 ]
Park, Wook-Ki [2 ]
Han, Seong-Tae [2 ]
机构：
[1] Ulsan Natl Inst Sci & Technol UNIST, Sch Elect & Comp Engn, Ulsan 689798, South Korea
[2] Korea Electrotechnol Res Inst KERI, Adv Med Device Res Ctr, Ansan 426910, Gyeonggi, South Korea
来源：
2013 18TH INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2013) | 2013年
关键词：
plasmonic terahertz wave; nonresonant regime; silicon FET detector; responsivity; asymmetry ratio; TERAHERTZ RADIATION;
D O I：
暂无
中图分类号：
TP301 [理论、方法];
学科分类号：
081202 ;
摘要：
We report the experiments of plasmonic terahertz (THz) wave detector based on silicon field-effect transistors (FETs) in the nonresonant sub-THz (0.2 THz) regime. The detector responsivity (R-V) as a function of gate voltage has been successfully controlled by the radiation power in agreement with the plasma wave detection theory. To investigate the effects of the overdamped charge asymmetry on R-V, FET structure with the asymmetric source and drain area under the gate has been proposed. The enhanced R-V according to the increase of asymmetry ratio between source and drain region has been confirmed experimentally.
引用
收藏
页码：200 / 203
页数：4
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