Silicon-photonics light source realized by III-V/Si-grating-mirror laser

被引：53
|
作者：
Chung, Il-Sug [1 ]
Mork, Jesper [1 ]
机构：
[1] Tech Univ Denmark, Dept Photon Engn, DTU Foton, DK-2800 Lyngby, Denmark
来源：
APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 15期
关键词：
SUBWAVELENGTH; CRYSTAL; VCSEL;
D O I：
10.1063/1.3503966
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A III-V/Si vertical-cavity in-plane-emitting laser structure is suggested and numerically investigated. This hybrid laser consists of a distributed Bragg reflector, a III-V active region, and a high-index-contrast grating (HCG) connected to an in-plane output waveguide. The HCG and the output waveguide are made in the Si layer of a silicon-on-insulator wafer by using Si-electronics-compatible processing. The HCG works as a highly-reflective mirror for vertical resonance and at the same time routes light to the in-plane output waveguide. Numerical simulations show superior performance compared to existing silicon light sources. (C) 2010 American Institute of Physics. [doi:10.1063/1.3503966]
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页数：3
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