Mg-doped Cu2O thin films with enhanced functional properties grown by magnetron sputtering under optimized pressure conditions

被引：3

作者：

Sliti, Naama ^{[1
,2
]}

Fourneau, Emile ^{[1
]}

Ratz, Thomas ^{[1
]}

Touihri, Saad ^{[2
]}

Ngoc Duy Nguyen ^{[1
]}

机构：

[1] Inst Phys, CESAM Q MAT Solid State Phys Interfaces & Nanostr, B5a,Allee Six Aout 19, B-4000 Liege, Belgium

[2] Univ Tunis, Ecole Natl Super Ingenieurs Tunis, 13 Ave Taha Hussein, Tunis 1008, Tunis, Tunisia

来源：

CERAMICS INTERNATIONAL | 2022年 / 48卷 / 16期

关键词：

Magnesium; Cuprous oxide; Sputtering; Plasma pressure; p-type transparent conducting oxide; CUPROUS-OXIDE; ELECTRONIC-STRUCTURE; VAPOR-DEPOSITION; LOW-RESISTIVITY; ZNO FILMS; TRANSPARENT; TEMPERATURE; POWER;

D O I：

10.1016/j.ceramint.2022.05.028

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Cu2O appears as a promising material for synthesizing p-type transparent semiconducting oxides with low electrical resistivity and high optical transmittance. We report on an exhaustive study of magnesium-doped cuprous oxide layers deposited by radio frequency magnetron sputtering. We present the characterization of the structural and optoelectronic properties of Mg:Cu2O thin films deposited at room temperature with varied argon plasma pressure. As a result, we found that by adjusting the Ar plasma pressure, Mg-doped Cu2O layers with high crystallinity combined with optimal electrical and optical properties can be synthesized. Using a plasma pressure of 13 mTorr, we obtained a transparent p-type material with crystallite size of 15 nm, electrical resistivity of 10.2 Omega cm, and optical band gap of 2.55 eV.

引用

页码：23748 / 23754

页数：7

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