Laser-induced phase conversion of n-type SnSe2 to p-type SnSe

被引：3

作者：

Zheng, Qi ^{[1
,2
,3
]}

Yang, Rong ^{[1
,2
,3
,5
]}

Wu, Kang ^{[1
,2
,3
]}

Lin, Xiao ^{[3
,4
]}

Du, Shixuan ^{[1
,2
,3
,4
,5
]}

Shen, Chengmin ^{[1
,2
,3
,4
]}

Bao, Lihong ^{[1
,2
,3
,4
,5
]}

Gao, Hong-Jun ^{[1
,2
,3
,4
,5
]}

机构：

[1] Chinese Acad Sci, Beijing Natl Ctr Condensed Matter Phys, Beijing 100190, Peoples R China

[2] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China

[3] Univ Chinese Acad Sci, Sch Phys Sci, Beijing 100190, Peoples R China

[4] Univ Chinese Acad Sci, CAS Ctr Excellence Topol Quantum Computat, Beijing 100190, Peoples R China

[5] Songshan Lake Mat Lab, Dongguan 523808, Peoples R China

来源：

CHINESE PHYSICS B | 2022年 / 31卷 / 04期

基金：

中国国家自然科学基金;

关键词：

SnSe2; SnSe; laser irradiation; local phase conversion;

D O I：

10.1088/1674-1056/ac4901

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report a facile phase conversion method that can locally convert n-type SnSe2 into p-type SnSe by direct laser irradiation. Raman spectra of SnSe2 flakes before and after laser irradiation confirm the phase conversion of SnSe2 to SnSe. By performing the laser irradiation on SnSe2 flakes at different temperatures, it is found that laser heating effect induces the removal of Se atoms from SnSe2 and results in the phase conversion of SnSe2 to SnSe. Lattice-revolved transmission electron microscope images of SnSe2 flakes before and after laser irradiation further confirm such conversion. By selective laser irradiation on SnSe2 flakes, a pattern with SnSe2/SnSe heteostructures is created. This indicates that the laser induced phase conversion technique has relatively high spatial resolution and enables the creation of micron-sized in-plane p-n junction at predefined region.

引用

页数：5

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