Half-Heusler Semiconductors as Piezoelectrics

被引:192
|
作者
Roy, Anindya [1 ]
Bennett, Joseph W. [1 ]
Rabe, Karin M. [1 ]
Vanderbilt, David [1 ]
机构
[1] Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08854 USA
关键词
FUNCTIONAL PERTURBATION-THEORY; CRYSTAL-STRUCTURE; PSEUDOPOTENTIALS; 1ST-PRINCIPLES;
D O I
10.1103/PhysRevLett.109.037602
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We use a first-principles rational-design approach to demonstrate the potential of semiconducting half-Heusler compounds as a previously unrecognized class of piezoelectric materials. We perform a high-throughput scan of a large number of compounds, testing for insulating character and calculating structural, dielectric, and piezoelectric properties. Our results provide guidance for the experimental realization and characterization of high-performance materials in this class that may be suitable for practical applications.
引用
收藏
页数:5
相关论文
共 50 条
  • [1] Theoretical search for magnetic half-Heusler semiconductors
    Tobola, J
    Kaprzyk, S
    Pecheur, P
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2003, 236 (02): : 531 - 535
  • [2] Vacancy induced half-metallicity in half-Heusler semiconductors
    Zhu, Zhiyong
    Cheng, Yingchun
    Schwingenschloegl, Udo
    PHYSICAL REVIEW B, 2011, 84 (11)
  • [3] Dilute magnetic semiconductors based on half-Heusler alloys
    Fukushima, Tetsuya
    Sato, Kazunori
    Katayama-Yoshida, Hiroshi
    Dederichs, Peter H.
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 2007, 76 (09)
  • [4] Piezoelectricity in half-Heusler narrow-bandgap semiconductors
    Huang, Yi
    Lv, Fu
    Han, Shen
    Chen, Mengzhao
    Wang, Yuechu
    Lou, Qianhui
    Fu, Chenguang
    Huang, Yuhui
    Wu, Di
    Li, Fei
    Zhu, Tiejun
    SCIENCE, 2025, 387 (6739) : 1187 - 1192
  • [5] Mn Doping in Half-Heusler Semiconductors: Microstructural and Transport Properties
    Wang, Fangfang
    Fukuhara, Tadashi
    Maezawa, Kunihiko
    Masubuchi, Shinichi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (05) : 0530021 - 0530025
  • [6] P-type dopability in Half-Heusler thermoelectric semiconductors
    Lirong Hu
    Shen Han
    Tiejun Zhu
    Tianqi Deng
    Chenguang Fu
    npj Computational Materials, 11 (1)
  • [7] Chemical bonding origin of the thermoelectric power factor in Half-Heusler semiconductors
    Tolborg, Kasper
    ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES, 2021, 77 : C278 - C278
  • [8] Surface Electronic States of 18 Valence Electron Half-Heusler Semiconductors
    Zhu, Zhiyong
    Wang, Hao
    Schwingenschloegl, Udo
    ADVANCED MATERIALS INTERFACES, 2015, 2 (04):
  • [9] Chemical Bonding Origin of the Thermoelectric Power Factor in Half-Heusler Semiconductors
    Tolborg, Kasper
    Iversen, Bo B.
    CHEMISTRY OF MATERIALS, 2021, 33 (13) : 5308 - 5316
  • [10] Characterization of rattling in relation to thermal conductivity: Ordered half-Heusler semiconductors
    Feng, Zhenzhen
    Fu, Yuhao
    Zhang, Yongsheng
    Singh, David J.
    PHYSICAL REVIEW B, 2020, 101 (06)