RF Performance Analysis of Graphene Nanoribbon Interconnect

被引：0

作者：

Das, Subhajit ^{[1
]}

Bhattacharya, Sandip ^{[1
]}

Das, Debaprasad ^{[2
]}

Rahaman, Hafizur ^{[1
]}

机构：

[1] Bengal Coll & Sci Univ, Sch VLSI Technol, Sibpur, India

[2] Assam Univ, Dept Elect & Telecommun, Silchar, India

来源：

2014 IEEE STUDENTS' TECHNOLOGY SYMPOSIUM (IEEE TECHSYM) | 2014年

关键词：

Graphene nanoribbon (GNR); interconnect; skin depth; Radio Frequency (RF); Very Large Scale Integration (VLSI); carbon nanotube (CNT);

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The work in this paper presents analysis of graphene nanoribbon (GNR) as nano-interconnect for radio-frequency (RF) VLSI circuits for 16 nm technology node. A frequency dependent electrical equivalent model is developed by calculating the circuit parameters based on interconnect geometry. Using the developed model the RF performance of GNR based interconnects is investigated and compared to that of copper based interconnects for 16 nm technology node. It is shown that GNR based interconnect shows better performance for operating in and beyond 1000 THz frequency range for shorter interconnect length.

引用

页码：105 / 110

页数：6

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