Nonlinear emission from an InGaAs/AlGaAs quantum-wire array

被引:1
|
作者
Kim, TG [1 ]
Son, CS
Tsurumachi, N
Oh, DK
Ogura, M
机构
[1] Korea Univ, Dept Elect Engn, Seoul 136701, South Korea
[2] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki, Japan
[3] Silla Univ, Dept Opt Engn, Pusan, South Korea
[4] Kagawa Univ, Dept Phys, Takamatsu, Kagawa 760, Japan
[5] Elect & Telecommun Res Lab, Optoelect Mat Team, Taejon, South Korea
关键词
D O I
10.1088/0957-4484/16/8/044
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Gain-coupled distributed-feedback (GC-DFB) effects in a V-groove ln(0.2)Ga(0.8)As/Al0.2Ga0.8As quantum-wire (QWR) array are investigated by comparison with those in a GaAs/Al0.2Ga0.8As QWR array. Temperature-dependent photoluminescence (PL) spectra are measured for both samples, showing that the PL spectra from the QWRs are much stronger than those from the quantum wells (QWs) in the entire temperature region. Then, InGaAs/AlGaAs QWR GC-DFB lasers are fabricated by one-step metallorganic chemical vapour deposition (MOCVD) growth and characterized. As a result, strong nonlinearity in the emission spectra by optical feedback along the DFB directions is clearly observed near the threshold current, indicating that a V-groove InGaAs QWR array is a good candidate for a gain-coupled DFB laser.
引用
收藏
页码:1245 / 1248
页数:4
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