Grain boundary effects on transport in metalorganic chemical vapor deposition-grown, Ca-doped lanthanum manganites

被引:9
|
作者
Heremans, JJ [1 ]
Watts, S [1 ]
Wirth, S [1 ]
Yu, X [1 ]
Gillman, ES [1 ]
Dahmen, KH [1 ]
von Molnár, S [1 ]
机构
[1] Florida State Univ, MARTECH, Tallahassee, FL 32306 USA
关键词
D O I
10.1063/1.367548
中图分类号
O59 [应用物理学];
学科分类号
摘要
The transport properties of metalorganic chemical vapor deposited films of lanthanum manganite grown on various substrates are investigated, The more disordered films show a magnetoresistance that is both large and relatively temperature independent over a wide temperature range. At low magnetic fields, a linear field dependence is observed and is attributed to spin-polarized intergrain tunneling. In addition, at low fields a hysteretic dependence of resistivity on the magnetic field has been observed. This effect has been attributed to the scattering of spin-polarized carriers at the grain boundary. (C) 1998 American Institute of Physics. [S0021-8979(98)18011-8].
引用
收藏
页码:7055 / 7057
页数:3
相关论文
共 50 条
  • [1] Grain boundary effects on transport in metalorganic chemical vapor deposition-grown, Ca-doped lanthanum manganites
    Heremans, J.J.
    Watts, S.
    Wirth, S.
    Yu, X.
    Gillman, E.S.
    Dahmen, K.H.
    von Molnar, S.
    Journal of Applied Physics, 1998, 83 (11 pt 2):
  • [2] PARATYPE DOPING OF METALORGANIC CHEMICAL VAPOR DEPOSITION-GROWN HGCDTE BY ARSENIC AND ANTIMONY
    EDWALL, DD
    BUBULAC, LO
    GERTNER, ER
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (04): : 1423 - 1427
  • [3] ORIENTATION DEPENDENCE OF ARSENIC INCORPORATION IN METALORGANIC CHEMICAL-VAPOR DEPOSITION-GROWN HGCDTE
    ELLIOTT, J
    KREISMANIS, VG
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (04): : 1428 - 1431
  • [4] Hole transport in Mg-doped GaN epilayers grown by metalorganic chemical vapor deposition
    Kim, KS
    Cheong, MG
    Hong, CH
    Yang, GM
    Lim, KY
    Suh, EK
    Lee, HJ
    APPLIED PHYSICS LETTERS, 2000, 76 (09) : 1149 - 1151
  • [5] Thermal conductivity of exfoliated and chemical vapor deposition-grown tin disulfide nanofilms: role of grain boundary conductance
    Zhang, Meng
    Zou, Bo
    Zhang, Xu
    Zhou, Yan
    Sun, Huarui
    JOURNAL OF ALLOYS AND COMPOUNDS, 2021, 856
  • [6] Atomic Resolution Imaging of Grain Boundary Defects in Monolayer Chemical Vapor Deposition-Grown Hexagonal Boron Nitride
    Gibb, Ashley L.
    Alem, Nasim
    Chen, Jian-Hao
    Erickson, Kristopher J.
    Ciston, Jim
    Gautam, Abhay
    Linck, Martin
    Zettl, Alex
    JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2013, 135 (18) : 6758 - 6761
  • [7] DIRECT EVIDENCE OF ER ATOMS OCCUPYING AN INTERSTITIAL SITE IN METALORGANIC CHEMICAL VAPOR DEPOSITION-GROWN GAASER
    NAKATA, J
    TANIGUCHI, M
    TAKAHEI, K
    APPLIED PHYSICS LETTERS, 1992, 61 (22) : 2665 - 2667
  • [8] Pump-probe spectroscopy of band tail states in metalorganic chemical vapor deposition-grown InGaN
    Schmidt, TJ
    Cho, YH
    Gainer, GH
    Song, JJ
    Keller, S
    Mishra, UK
    DenBaars, SP
    APPLIED PHYSICS LETTERS, 1998, 73 (13) : 1892 - 1894
  • [9] Apparatus for investigating metalorganic chemical vapor deposition-grown semiconductors with ultrahigh-vacuum based techniques
    Hannappel, T
    Visbeck, S
    Töben, L
    Willig, F
    REVIEW OF SCIENTIFIC INSTRUMENTS, 2004, 75 (05): : 1297 - 1304
  • [10] Characterization of Mg-doped GaN grown by metalorganic chemical vapor deposition
    Lachab, M
    Youn, DH
    Fareed, RSQ
    Wang, T
    Sakai, S
    SOLID-STATE ELECTRONICS, 2000, 44 (09) : 1669 - 1677