Nondestructive analysis of threading dislocations in GaN by electron channeling contrast imaging

被引：44

作者：

Picard, Y. N. ^{[1
]}

Caldwell, J. D.

Twigg, M. E.

Eddy, C. R., Jr.

Mastro, M. A.

Henry, R. L.

Holm, R. T.

机构：

[1] USN, Res Lab, Elect Sci & Technol Div, Washington, DC 20375 USA

[2] NASA, Glenn Res Ctr, Cleveland, OH 44135 USA

[3] OAI, Cleveland, OH 44135 USA

[4] Sest Inc, Cleveland, OH 44135 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 09期

基金：

美国国家航空航天局;

关键词：

D O I：

10.1063/1.2777151

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Threading dislocations in metal-organic chemical-vapor grown GaN films were imaged nondestructively by the electron channeling contrast imaging (ECCI) technique. Comparisons between ECCI and cross-sectional transmission electron microscopy indicated that pure edge dislocations can be imaged in GaN by ECCI. Total threading dislocation densities were measured by ECCI for various GaN films on engineered 4H-SiC surfaces and ranged from 10(7) to 10(9) cm(-2). A comparison between the ultraviolet electroluminescent output measured at 380 nm and the total dislocation density as measured by ECCI revealed an inverse logarithmic dependence. (c) 2007 American Institute of Physics.

引用

页数：3

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