A Novel Method to Measure Absolute Internal Quantum Efficiency in III-Nitride Semiconductors by Simultaneous Photo-Acoustic and Photoluminescence Spectroscopy

被引：10

作者：

Yamaguchi, Atsushi A. ^{[1
]}

Kawakami, Kohei ^{[1
]}

Shimizu, Naoto ^{[1
]}

Takahashi, Yuchi ^{[1
]}

Kobayashi, Genki ^{[1
]}

Nakano, Takashi ^{[1
]}

Sakai, Shigeta ^{[1
]}

Kanitani, Yuya ^{[2
]}

Tomiya, Shigetaka ^{[2
]}

机构：

[1] Kanazawa Inst Technol, Nonoichi, Ishikawa 9218501, Japan

[2] SONY Corp, Atsugi, Kanagawa 2430014, Japan

来源：

IEICE TRANSACTIONS ON ELECTRONICS | 2018年 / E101C卷 / 07期

关键词：

internal quantum efficiency; recombination; PAS; PL;

D O I：

10.1587/transele.E101.C.527

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Internal quantum efficiency (IQE) is usually estimated from temperature dependence of photoluminescence (PL) intensity by assuming that the IQE at cryogenic temperature is unity. III-nitride samples, however, usually have large defect density, and the assumption is not necessarily valid. In 2016, we proposed a new method to estimate accurate IQE values by simultaneous PL and photo-acoustic (PA) measurements, and demonstratively evaluated the IQE values for various GaN samples. In this study, we have applied the method to InGaN quantum-well active layers and have estimated the IQE values and their excitation carrier-density dependence in the layers.

引用

页码：527 / 531

页数：5

共 22 条

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