Effect of air annealing on the optical electrical and structural properties of In2S3 films

被引：19
|
作者：
Bedir, Metin [1 ]
Oztas, Mustafa [1 ]
机构：
[1] Gaziantep Univ, Fac Engn, Dept Engn Phys, TR-27310 Gaziantep, Turkey
来源：
SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES | 2008年 / 51卷 / 05期
关键词：
In(2)S(3); spray pyrolysis; annealing; structural properties;
D O I：
10.1007/s11431-008-0074-0
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effect of the annealing temperature T (a) on the optical, electrical and structural properties of the In(2)S(3) films obtained by the spray pyrolysis method at 350 degrees C substrate temperature was studied. All the In(2)S(3) films annealed in the range from 100 to 400 degrees C are polycrystalline with (220) preferential orientation. The resistivity decreases as T (a) increases until it reaches a value of 25 Ohm-cm for T(a)=400 degrees C. The grain size also increases when T (a) increases as observed in data calculated from X-ray measurements. XRD data indicates that samples show microstructural perfection improvement as a function of annealing temperature.
引用
收藏
页码：487 / 493
页数：7
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