Theoretical investigation of gate dielectrics

被引：2

作者：

Demkov, AA ^{[1
]}

Zhang, XD ^{[1
]}

机构：

[1] Motorola Inc, Phys Sci Res Labs, Tempe, AZ 85284 USA

来源：

2001 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS | 2000年

关键词：

D O I：

10.1109/ISCS.2000.947146

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We describe a theoretical methodology for screening potential gate dielectric materials. A recently proposed method for constructing realistic structural models of the Si-dielectric interface is used to generate the Si-SiO2-Si and Si-SiON-SiO2-Si model metal-oxide-semiconductor (MOS) structures. We use ballistic transport approach to investigate the low bias leakage through these ultra-thin dielectric layers. We investigate the thermodynamic stability of the SrTiO3-Si interface, and present the first ab-initio study of the structure and electronic properties of crystalline HfO2.

引用

页码：155 / 160

页数：6

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