Characterization of scintillation properties of Nd-doped Bi4Ge3O12 single crystals with near-infrared luminescence

被引：22
|
作者：
Okazaki, Kai [1 ]
Onoda, Daichi [1 ]
Fukushima, Hiroyuki [1 ]
Nakauchi, Daisuke [1 ]
Kato, Takumi [1 ]
Kawaguchi, Noriaki [1 ]
Yanagida, Takayuki [1 ]
机构：
[1] Nara Inst Sci & Technol NAIST, Div Mat Sci, 8916-5 Takayama Cho, Ikoma, Nara 6300192, Japan
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2021年 / 32卷 / 16期
关键词：
PHOTODYNAMIC THERAPY; NIR; PHOTODETECTOR; BGO; RADIATION; PRODRUG;
D O I：
10.1007/s10854-021-06686-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We synthesized the Nd-doped Bi4Ge3O12 (BGO) single crystals with different concentrations of Nd (0.1, 0.5, and 1%) by the floating zone method and evaluated the photoluminescence (PL) and scintillation properties. In both the PL and scintillation spectra, intrinsic luminescence of BGO was observed at 400-600 nm. In addition, emission peaks due to the 4f-4f transitions of Nd3+ were observed in the near-infrared range. The 0.5% Nd-doped sample indicated the highest quantum yield of 42.9% among the samples. All the samples showed good linearity between X-ray exposure dose rate and the emission intensity in the NIR range. The lowest detectable dose rates were 0.06 Gy/h in the 0.1 and 1% Nd-doped BGO samples, and that of the 0.5% Nd-doped BGO sample was 0.01 Gy/h.
引用
收藏
页码：21677 / 21684
页数：8
相关论文
共 50 条
  • [1] Characterization of scintillation properties of Nd-doped Bi4Ge3O12 single crystals with near-infrared luminescence
    Kai Okazaki
    Daichi Onoda
    Hiroyuki Fukushima
    Daisuke Nakauchi
    Takumi Kato
    Noriaki Kawaguchi
    Takayuki Yanagida
    Journal of Materials Science: Materials in Electronics, 2021, 32 : 21677 - 21684
  • [2] Scintillation properties of Yb-doped Bi4Ge3O12 single crystals emitting near-infrared luminescence
    Okazaki, Kai
    Fukushima, Hiroyuki
    Nakauchi, Daisuke
    Kato, Takumi
    Kawaguchi, Noriaki
    Yanagida, Takayuki
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2022, 61 (06)
  • [3] Near-infrared luminescence in doped Bi4Ge3O12 crystals
    Yu, Ping-Sheng
    Su, Liang-Bi
    Xu, Jun
    Faguang Xuebao/Chinese Journal of Luminescence, 2015, 36 (03): : 283 - 287
  • [4] Near-infrared luminescence in Al doped Bi4Ge3O12 crystals
    Yu, Pingsheng
    Su, Liangbi
    Guo, Xin
    Xu, Jun
    JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, 2012, 120 (1403) : 265 - 267
  • [5] Investigation of Er:Bi4Ge3O12 single crystals emitting near-infrared luminescence for scintillation detectors
    Okazaki K.
    Fukushima H.
    Nakauchi D.
    Okada G.
    Onoda D.
    Kato T.
    Kawaguchi N.
    Yanagida T.
    Journal of Alloys and Compounds, 2022, 903
  • [6] Investigation of Er:Bi4Ge3O12 single crystals emitting near-infrared luminescence for scintillation detectors
    Okazaki, Kai
    Fukushima, Hiroyuki
    Nakauchi, Daisuke
    Okada, Go
    Onoda, Daichi
    Kato, Takumi
    Kawaguchi, Noriaki
    Yanagida, Takayuki
    JOURNAL OF ALLOYS AND COMPOUNDS, 2022, 903
  • [7] GROWTH AND OPTICAL PROPERTIES OF Nd-DOPED Bi4Ge3O12 SINGLE CRYSTALS.
    Whang, C. M.
    Bae, I. K.
    ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES, 1999, 55 : 536 - 537
  • [8] GROWTH, LASER AND MAGNETOOPTIC PROPERTIES OF ND-DOPED BI4GE3O12 CRYSTALS
    FENG, XQ
    HU, GQ
    YIN, ZW
    HUANG, YP
    KAPPHAN, S
    FISHER, C
    ZHOU, FZ
    YANG, Y
    FAN, DY
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1994, 23 (02): : 83 - 87
  • [9] Near-infrared luminescence of OH- and Cl- doped Bi4Ge3O12 crystals
    Yu, Pingsheng
    Su, Liangbi
    Xu, Jun
    INFRARED PHYSICS & TECHNOLOGY, 2012, 55 (01) : 146 - 149
  • [10] Near-infrared scintillation properties of Nd-doped CaYAl3O7 single crystals
    Nishikawa, Akihiro
    Ichiba, Kensei
    Kato, Takumi
    Nakauchi, Daisuke
    Kawaguchi, Noriaki
    Yanagida, Takayuki
    APPLIED RADIATION AND ISOTOPES, 2024, 214
12345