A BTI Analysis Tool (BAT) to Simulate p-MOSFET Ageing Under Diverse Experimental Conditions

被引：0

作者：

Mahapatra, Souvik ^{[1
]}

Parihar, Narendra ^{[1
]}

Mishra, Subrat ^{[1
]}

Fernandez, Beryl ^{[1
]}

Chaudhary, Ankush ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Elect Engn, Bombay, Maharashtra, India

来源：

2017 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM) | 2017年

关键词：

NBTI; Reaction-Diffusion (RD) model; trap generation; hole trapping; TCAD; NBTI;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A physical modeling framework is demonstrated for Negative Bias Temperature Instability (NBTI). It can simulate temporal kinetics of threshold voltage shift (. VT) during and after DC and AC stress and mixed DC-AC stress for dynamic voltage, frequency and activity conditions. It can predict gate insulator process dependence and is consistent with large and small area devices. The framework is included in a commercial TCAD software to simulate degradation of FinFETs and GAA NWFETs.

引用

页码：111 / 113

页数：3

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