Zn-Doped Zr Oxynitride as Charge-Trapping Layer for Flash Memory Applications

被引：0
|
作者：
Tao, Q. B. [1 ]
Lai, P. T. [1 ]
机构：
[1] Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China
来源：
2013 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) | 2013年
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
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页数：2
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