Magneto-resistance and I-V characteristic studies of AlSb and InSb thin film bilayer structure

被引：0

作者：

Singh, M ^{[1
]}

Vijay, YK ^{[1
]}

机构：

[1] Univ Rajasthan, Dept Phys, Jaipur 302004, Rajasthan, India

来源：

INDIAN JOURNAL OF PURE & APPLIED PHYSICS | 2005年 / 43卷 / 05期

关键词：

I-V characteristic; magneto resistance; inter-diffusion; Rutherford backscattering measurements; bilayer;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The I-V characteristic and magneto-resistance of Al-Sb and In-Sb thin films were measured with Cu electrode as the electrical contact. It was found that I-V characteristics are non-linear in nature and magneto-resistance decreases in case of Al-Sb and increases in case of In-Sb thin film bilayer structure. The Rutherford backscattering-measurements also indicate the inter-diffusion and the concentration varies with temperature.

引用

页码：383 / 385

页数：3

共 50 条

[1] Magneto-resistance effect in InSb thin film grown using molecular beam epitaxy
Okamoto, Atsushi
Yoshida, Takashi
Muramatsu, Shogo
Shibasaki, Ichiro
Journal of Crystal Growth, 1999, 201-202 : 765 - 768
[2] Magneto-resistance effect in InSb thin film grown using molecular beam epitaxy
Okamoto, A
Yoshida, T
Muramatsu, S
Shibasaki, I
JOURNAL OF CRYSTAL GROWTH, 1999, 201 : 765 - 768
[3] Analysis of the I-V characteristic of vanadium oxide thin film
Key Laboratory of Electronic Thin Film and Integrated Device, University of Electronic Science and Technology of China, Chengdu 610054, China
Bandaoti Guangdian, 2008, 5 (716-718): : 716 - 718
[4] Research on I-V temperature characteristic for InSb IRFPA
Guo Qiang
Liu Jun-ming
Wang Wei
Si Jun-jie
Wang Jing
INTERNATIONAL SYMPOSIUM ON PHOTOELECTRONIC DETECTION AND IMAGING 2011: ADVANCES IN INFRARED IMAGING AND APPLICATIONS, 2011, 8193
[5] InSb thin films grown on GaAs substrate and their magneto-resistance effect
Okamoto, A
Ashihara, A
Akaogi, T
Shibasaki, I
JOURNAL OF CRYSTAL GROWTH, 2001, 227 : 619 - 624
[6] Spatial resolution measurement of giant magneto-resistance thin film
Yoshizawa, N
Nakane, H
Negishi, T
Shimada, Y
Kikuchi, T
Arai, K
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2002, 239 (1-3) : 198 - 200
[7] A compact model of I-V characteristic degradation for organic thin film transistors
Saito, Michiaki
Shintani, Michihiro
Kuribara, Kazunori
Ogasahara, Yasuhiro
Sato, Takashi
2019 IEEE 32ND INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES (ICMTS), 2019, : 194 - 199
[8] The Structure and I-V Property of a-C:F Thin Film
黄峰
康健
叶超
杨慎东
程珊华
宁兆元
Plasma Science & Technology, 2001, (05) : 947 - 952
[9] Optimized design of plastic package for InSb thin-film magneto-resistance devices for gear-tooth rotation detection
Shibasaki Laboratory, Asahikasei Corporation, 2-1 Samejima, Fuji, Shizuoka 416-8501, Japan
不详
不详
不详
IEEJ Trans. Sens. Micromach., 2007, 8 (371-375+2):
[10] Study on the I-V characteristics of ferroelectric thin film systems with the structure of MFSM
Yu, J
Dong, XM
Zhou, WL
Wang, YB
Zheng, YK
Wang, H
Liu, G
Xie, JF
Gao, JX
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 76 (01): : 22 - 25

← 1 2 3 4 5 →