Preparation of single-crystal diamond for Small Angle X-ray Scattering in situ loading test

A 2.45 GHz/6 kW cylindrical cavity type microwave plasma chemical vapor deposition reactor was used for the growth of high optical quality single-crystal diamonds. The effects of growth temperature on the surface morphology and crystal quality and the optical properties of the synthesized diamond were studied using optical microscopy, XRD rocking curve, Raman spectroscopy, photoluminescence spectroscopy, Small Angle X-ray Scattering and X-ray topography. Diamond single crystal of the size of phi 7 x 0.5 mm(3) were obtained at 1000 ? in a pocket holder with the average growth rate of 7.5 um/h. X-ray rocking curve of the sample was 32 arcsec, while the X-ray transmittance was over 80%. There were no evident N-V defects peak in PL. After high pressure blasting test, the diamond windows prepared at 1000 ? can also withstand the pressure of 27 MPa. All these performances were suitable for the windows which was applied on Small Angle X-ray Scattering in situ loading test. Design of a device for Small Angle X-ray Scattering in situ loading test was demonstrated. The device was convenient for the research of material structural changes under high pressure.