Accurate operation of a CMOS integrated temperature sensor

被引：5
|
作者：
Jiang, Li [1 ,2 ]
Xu, Weisheng [1 ,2 ]
Yu, Youlin [1 ,2 ]
机构：
[1] Tongji Univ, Sch Elect & Informat, Shanghai 201804, Peoples R China
[2] Tongji Univ, Res Inst Semicond & Informat, Shanghai 201804, Peoples R China
来源：
MICROELECTRONICS JOURNAL | 2010年 / 41卷 / 12期
关键词：
Dynamic element matching; Substrate bipolar transistor; Temperature sensor; Chopper; Reference voltage;
D O I：
10.1016/j.mejo.2010.08.001
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A high-accuracy temperature sensor is designed by applying the temperature characteristics of substrate bipolar transistor in CMOS technology. Initial accuracy of the temperature sensor can be improved by chopper amplifiers and dynamic element matching. Using these two methods, the circuit realization of reference voltage is also described. Simulation results show that the inaccuracy is within x 0.4 degrees C from -40 to +100 degrees C. Experimental results, obtained from circuits fabricated in 0.5 mu m CMOS process, indicate that the sensor is inaccurate within x 0.7 degrees C from -40 to +100 degrees C. The power dissipation is 0.35 mW and the chip area is 889 mu m x 620 mu m. Compared with previously reported work, the temperature sensor in the paper has lower inaccuracy without calibration. (C) 2010 Elsevier Ltd. All rights reserved.
引用
收藏
页码：897 / 905
页数：9
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