A 0.25-μm CMOS quad-band GSM RF transceiver using an efficient LO frequency plan

被引:11
|
作者
Song, ES [1 ]
Koo, Y
Jung, YJ
Lee, DH
Chu, SY
Chae, SI
机构
[1] Seoul Natl Univ, Sch Elect Engn, ISRC, Seoul 151742, South Korea
[2] GCT Semicond Inc, San Jose, CA 95131 USA
关键词
CMOS; dc offset; direct conversion; frequency divider; GSM; LO frequency; offset phase-locked loop (PLL); quadband; transceiver;
D O I
10.1109/JSSC.2005.845990
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper describes a single-chip CMOS quad-band (850/900/1800/1900 MHz) RF transceiver for GSM/GPRS applications. It is the most important design issue to maximize resource sharing and reuse in designing the multiband transceivers. In particular, reducing the number of voltage-controlled oscillators (VCOs) required for local oscillator (LO) frequency generation is very important because the VCO and phase-locked loop (PLL) circuits occupy a relatively large area. We propose a quad-band GSM transceiver architecture that employs a direct conversion receiver and an offset PLL transmitter, which requires only one VCO/PLL to generate LO signals by using an efficient LO frequency plan. In the receive path, four separate LNAs are used for each band, and two down-conversion mixers are used, one for the low bands (850/900 MHz) and the other for the high bands (1800/1900 MHz). A receiver baseband circuit is shared for all four bands because all of their channel spaces are the same. In the transmit path, most of the building blocks of the offset PLL, including a TX VCO and IF filters, are integrated. The quad-band GSM transceiver that was implemented in 0.25-mu m CMOS technology has a size of 3.3 x 3.2 mm(2), including its pad area. From the experimental results, we found that the receiver provides a maximum noise figure of 2.9 dB and a minimum IIP3 of -13.2 dBm for the EGSM 900 band. The transmitter shows an rms phase error of 1.4 degrees and meets the GSM spectral mask specification. The prototype chip consumes 56 and 58 mA at 2.8 V in the RX and TX modes, respectively.
引用
收藏
页码:1094 / 1106
页数:13
相关论文
共 19 条
  • [1] GSM transceiver front-end circuits in 0.25-μm CMOS
    Swiss Federal Inst of Technology, Zurich, Switzerland
    IEEE J Solid State Circuits, 3 (292-303):
  • [2] GSM transceiver front-end circuits in 0.25-μm CMOS
    Huang, QT
    Orsatti, P
    Piazza, F
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1999, 34 (03) : 292 - 303
  • [3] A single-chip RF transceiver for quad-band GSM/GPRS applications
    Dehng, GK
    Kuo, CF
    Wang, ST
    Tsai, MH
    Ku, CC
    Yeh, V
    Ke, LW
    Hsaio, CM
    Chiu, C
    Tzeng, B
    Tang, CC
    Bo, JC
    Juan, RC
    Ren, CS
    Xue, HX
    2004 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS, 2004, : 427 - 430
  • [4] A Highly Efficient GSM/GPRS Quad-band CMOS PA Module
    Lee, Chang-Ho
    Chang, Jae Joon
    Yang, Ki Seok
    An, Kyu Hwan
    Lee, Izuka
    Kim, Kijoong
    Nam, Joongjin
    Kim, Yunseok
    Kim, Haksun
    RFIC: 2009 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM, 2009, : 203 - +
  • [5] A 0.13 μm CMOS Quad-Band GSM/GPRS/EDGE RF Transceiver Using a Low-Noise Fractional-N Frequency Synthesizer and Direct-Conversion Architecture
    Chen, Pei-Wei
    Lin, Tser-Yu
    Ke, Ling-Wei
    Yu, Rickey
    Tsai, Ming-Da
    Yeh, Stanley
    Lee, Yi-Bin
    Tzeng, Bosen
    Chen, Yen-Horng
    Huang, Sheng-Jui
    Lin, Yu-Hsin
    Dehng, Guang-Kaai
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2009, 44 (05) : 1454 - 1463
  • [6] A quad-band low power single chip direct conversion CMOS transceiver with ΣΔ-modulation loop for GSM
    Götz, E
    Kröbel, H
    Märzinger, G
    Memmler, B
    Münker, C
    Neurauter, B
    Römer, D
    Rubach, J
    Schelmbauer, W
    Scholz, M
    Simon, M
    Steinacker, U
    Stöger, C
    ESSCIRC 2003: PROCEEDINGS OF THE 29TH EUROPEAN SOLID-STATE CIRCUITS CONFERENCE, 2003, : 217 - 220
  • [7] LTCC quad band GSM RF transceiver using integrated passive matching network
    Park, Y. H.
    Kim, H. R.
    Oh, K. J.
    Cho, Y. H.
    Kim, B. S.
    2005 EUROPEAN CONFERENCE ON WIRELESS TECHNOLOGIES (ECWT), CONFERENCE PROCEEDINGS, 2005, : 407 - 410
  • [8] LTCC quad band GSM RF transceiver using integrated passive matching network
    Park, Y. H.
    Kim, H. R.
    Oh, K. J.
    Cho, Y. H.
    Kim, B. S.
    35th European Microwave Conference, Vols 1-3, Conference Proceedings, 2005, : 1807 - 1810
  • [9] A 20-mA-Receive, 55-mA-Transmit, single-chip GSM transceiver in 0.25-μm CMOS
    Orsatti, P
    Piazza, F
    Huang, QT
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1999, 34 (12) : 1869 - 1880
  • [10] A 0.25-μm CMOS 1.9-GHz PHS RF transceiver with a 150-kHz low-IF architecture
    Jeong, Hoesam
    Yoo, Lyoung-Joo
    Han, Cheolkyu
    Lee, Sang-Yoon
    Lee, Kang-Yoon
    Kim, Suhwan
    Jeong, Deog-Kyoon
    Kim, Wonchan
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2007, 42 (06) : 1318 - 1327