Spin hall accumulation in ballistic nanojunctions

被引：1
|
作者：
Bellucci, S.
Onorato, P.
机构：
[1] Ist Nazl Fis Nucl, Lab Nazl Frascati, I-00044 Frascati, Italy
[2] Univ Pavia, Dept Phys A Volta, I-27100 Pavia, Italy
[3] Seconda Univ Napoli, Dip Ingn Informaz, I-81031 Aversa, CE, Italy
来源：
EUROPEAN PHYSICAL JOURNAL B | 2007年 / 59卷 / 01期
关键词：
72.25.-b Spin polarized transport; 72.20.My Galvanomagnetic and other magnetotransport effects; 73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects);
D O I：
10.1140/epjb/e2007-00269-1
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We propose a new scheme of spin filtering employing ballistic nanojunctions patterned in a two dimensional electron gas (2DEG). Our proposal is essentially based on the spin-orbit (SO) interaction generated by a lateral confining potential (beta-SO coupling ). We demonstrate that the flow of a longitudinal unpolarized current through a ballistic T and X junction with this spin-orbit coupling will induce a spin accumulation which has opposite signs for the two lateral probes and is, therefore, the principal observable signature of the spin Hall effect in these devices.
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页码：35 / 40
页数：6
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