Structural and magnetic properties of diluted magnetic semiconductor GaGdN nanorods

被引：3
|
作者：
Tambo, H. [1 ]
Hasegawa, S. [1 ]
Higashi, K. [1 ]
Kakimi, R. [1 ]
Tawil, S. N. M. [1 ]
Zhou, Y. K. [1 ]
Emura, S. [1 ]
Asahi, H. [1 ]
机构：
[1] Osaka Univ, Inst Sci & Ind Res, Ibaraki, Osaka 5670047, Japan
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 2 | 2011年 / 8卷 / 02期
关键词：
GaGdN; nanorods; molecular-beam epitaxy; magnetic semiconductor; MOLECULAR-BEAM EPITAXY; CRYSTAL-GROWTH; FERROMAGNETISM;
D O I：
10.1002/pssc.201000486
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Diluted magnetic semiconductor GaGdN nanorods were grown on Si (001) substrates with native silicon oxides by molecular-beam epitaxy with radio frequency nitrogen plasma. The Gd cell temperature dependences of their structural and magnetic properties were systematically studied. It was found that higher Gd fluxes suppress the growth of nanorods along the c-direction and form GdN secondary phase. Magnetic measurement also revealed that nanorods of high content Gd showed small magnetization, indicating that GdN come to form and therefore the amount of Gd atoms substituted for Ga sites in GaGdN decreases. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：494 / 496
页数：3
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