Effects of Al ion implantation on the strength of Al2O3 particles

被引:9
|
作者
Ogiso, Hisato [1 ]
Yoshida, Mikiko [1 ]
Nakano, Shizuka [1 ]
Akedo, Jun [1 ]
机构
[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058564, Japan
来源
SURFACE & COATINGS TECHNOLOGY | 2007年 / 201卷 / 19-20期
关键词
strength; defect; implantation effect; compression test;
D O I
10.1016/j.surfcoat.2006.01.093
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Ion implantation into ceramic materials changes their mechanical properties. These changes are also affected by the substrate, however. To examine the effect of ion implantation without the effect of the substrate, in this study a-Alumina particles (average diameter of 2 mu m) were implanted with 2.6 MeV Al ions at an ion dose of 1 x 10(17) cm(-2). The implantation introduced the defect, such as vacancies and interstitial atoms, into entire particle, because the penetration depth of 2.6 MeV ions was comparable to the diameter of the particles. The compression test of ion-implanted particles was performed to evaluate their strength. The ion implantation had little effect on the strength of the particles, indicating that the defect induced by the implantation does not directly determine the strength of the Al2O3 Particles. The result was compared with the result of bulk Al2O3 (sapphire (11(-)02) surface). The implantation into bulk sapphire increased the fracture toughness, K-1C, of the surface, this increase of the fracture toughness was responsible for the residual stress induced by the ion implantation. (c) 2007 Published by Elsevier B.V.
引用
收藏
页码:8180 / 8184
页数:5
相关论文
共 50 条
  • [1] ION-IMPLANTATION EFFECTS IN AL2O3
    ARNOLD, GW
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1974, 19 (03): : 210 - 210
  • [2] Fe-56(+)-ion implantation effects in Al2O3
    Jang, HG
    Kim, HB
    Joo, JH
    Whang, CN
    Kim, HK
    Moon, DW
    Woo, JJ
    Kim, SO
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1997, 124 (04): : 528 - 532
  • [3] STRENGTHENING OF AL2O3 BY ION-IMPLANTATION
    HIOKI, T
    ITOH, A
    NODA, S
    DOI, H
    KAWAMOTO, J
    KAMIGAITO, O
    JOURNAL OF MATERIALS SCIENCE LETTERS, 1984, 3 (12) : 1099 - 1101
  • [4] Study of Si ion implantation in GaN on AL2O3
    Toyoda, Y.
    Tajima, T.
    Nomoto, K.
    Nakamura, T.
    REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY, HOSEI UNIVERSITY, SUPPL NO 28, 2010, 28 : 103 - 106
  • [5] Bond strength and microstructure investigation on Al2O3/Al/Al2O3 joints
    Ksiazek, M
    Sobczak, N
    Mikulowski, B
    Radziwilli, W
    Winiarski, B
    SURFACE AND INTERFACE ANALYSIS, 2004, 36 (08) : 673 - 676
  • [6] Etching of amorphous Al2O3 produced by ion implantation
    McHargue, CJ
    Hunn, JD
    Joslin, DL
    Alves, E
    daSilva, MF
    Soares, JC
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1997, 127 : 596 - 598
  • [7] Etching of amorphous Al2O3 produced by ion implantation
    McHargue, Carl J.
    Hunn, John D.
    Joslin, Debra L.
    Alves, E.
    da Silva, M.F.
    Soares, J.C.
    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1997, 127-128 : 596 - 598
  • [8] Quantitative analysis of Al2O3 particles in Al3Ti/Al2O3/Al composites
    Swiderska-Sroda, A
    Wejrzanowski, T
    Kurzydlowski, KJ
    Wyrzykowski, JW
    MATERIALS CHARACTERIZATION, 2003, 51 (2-3) : 141 - 146
  • [9] Effects of Mg-ion implantation in α-Al2O3 and α-Al2O3:Mg crystals: Electrical conductivity and electronic structure changes
    Tardio, M.
    Colera, I.
    Ramirez, R.
    Alves, E.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2010, 268 (19): : 2874 - 2877
  • [10] Iron implantation in α-Al2O3
    Dezsi, I.
    Szucs, I.
    Fetzer, Cs.
    JOURNAL OF APPLIED PHYSICS, 2008, 104 (03)