Design and implementation of BiFET LNAs for W-CDMA/IEEE 802.11 a applications

被引：1
|
作者：
Moreira, C. P. [1 ]
Kerherve, E. [1 ]
Jarry, P. [1 ]
Belot, D. [2 ]
机构：
[1] Univ Bordeaux 1, CNRS, UMR 5818, Lab IXL,ENSEIRB, F-33405 Talence, France
[2] STMicroelectronics, Crolles, France
来源：
2006 13TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS AND SYSTEMS, VOLS 1-3 | 2006年
关键词：
D O I：
10.1109/ICECS.2006.379703
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present is this article consistent guidelines to the design and implementation of fully-integrated BiFET low noise amplifiers (LNA). The effectiveness of BiFET topology and the applied methodologies are verified throughout measurement results of two fabricated BiFET LNAs. The first LNA is dedicated to W-CDMA applications (2.11-2.17GRz) and its die area is 1.0 x 0.7 mm(2). The second manufactured circuit is targeted to W-LAN IEEEE 802.11a standard in European band (5.15-5.35GRz). The W-LAN LNA die area is 1.0 x 0.57 mm(2).
引用
收藏
页码：70 / +
页数：2
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